FDMA8051L Datasheet | Fairchild Semiconductor

FDMA8051L Single N-Channel Power Trench® MOSFET January 2014 Single N-Channel Power Trench® MOSFET 40 V, 10 A, 14 mΩ Features - Max r DS(on) = 14 mΩ at VGS = 10 V, ID = 10 A - Max r DS(on) = 18 mΩ at VGS = 4.5 V, ID = 8.5 A - Low Profile - 0.8 mm maximum in the new package Micro FET 2x2 mm - Free from halogenated pounds and antimony oxides - Ro HS pliant General Description This device has been designed to provide maximum efficiency and thermal performance for synchronous buck converters. The low r DS(on) and gate charge provide excellent switching performance. Application - DC - DC Buck Converters Pin 1 Drain DD G Source Bottom Drain Contact DD S Micro FET 2X2 (Bottom View) MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS ID PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Pulsed TA = 25 °C Power...