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FDMA86251 - MOSFET

Description

Max rDS(on) = 175 mΩ at VGS = 10 V, ID = 2.4 A Max rDS(on) = 237 mΩ at VGS = 6 V, ID = 2.0 A Low Profile - 0.8 mm maximum in the new package MicroFET 2x2 mm Free from halogenated compounds and antimony oxides RoHS Compliant This device has been des

Features

  • General.

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FDMA86251 Single N-Channel PowerTrench® MOSFET October 2015 FDMA86251 Single N-Channel PowerTrench® MOSFET 150 V, 2.4 A, 175 mΩ Features General Description „ Max rDS(on) = 175 mΩ at VGS = 10 V, ID = 2.4 A „ Max rDS(on) = 237 mΩ at VGS = 6 V, ID = 2.0 A „ Low Profile - 0.8 mm maximum in the new package MicroFET 2x2 mm „ Free from halogenated compounds and antimony oxides „ RoHS Compliant This device has been designed to provide maximum efficiency and thermal performance for synchronous buck converters. The low rDS(on) and gate charge provide excellent switching performance. Applications „ DC – DC Primary Switch „ Load Switch Pin 1 Drain DD G Source Bottom Drain Contact DD DD DD S MicroFET 2X2 (Bottom View) G S MOSFET Maximum Ratings TA = 25 °C unless otherwise noted.
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