FDMA86251 Datasheet | Fairchild Semiconductor

Features General Description - Max r DS(on) = 175 mΩ at VGS = 10 V, ID = 2.4 A - Max r DS(on) = 237 mΩ at VGS = 6 V, ID = 2.0 A - Low Profile - 0.8 mm maximum in the new package Micro FET 2x2 mm - Free from halogenated pounds and antimony oxides - Ro HS pliant This device has been designed to provide maximum efficiency and thermal performance for synchronous buck converters. The low r DS(on) and gate charge provide excellent switching performance. Applications - DC - DC Primary Switch - Load Switch Pin 1 Drain DD G Source Bottom Drain Contact DD S Micro FET 2X2 (Bottom View) MOSFET Maximum Ratings TA = 25 °C unless otherwise noted. Symbol VDS VGS Drain to Source Voltage Gate to Source Voltage Drain Curre -Continuous -Pulsed Parameter TA = 25 °C EAS PD TJ, TSTG Single Pulse Avalanche Energy Power Dissipation TA...