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FDMA86265P - P-Channel MOSFET

General Description

This P-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® process that has been optimized for the on-state resistance and yet maintain superior switching performance.

Active Clamp Switch Load Switch Pin 1 Drain DD G Source BBootttotom

Key Features

  • Max rDS(on) = 1.2 Ω at VGS = -10 V, ID = -1 A.
  • Max rDS(on) = 1.4 Ω at VGS = -6 V, ID = -0.9 A.
  • Low Profile - 0.8 mm maximum in the new package MicroFET 2x2 mm.
  • Very low RDS-on mid voltage P-channel silicon technology optimised for low Qg.
  • This product is optimised for fast switching.

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Full PDF Text Transcription for FDMA86265P (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for FDMA86265P. For precise diagrams, and layout, please refer to the original PDF.

FDMA86265P P-Channel PowerTrench® MOSFET August 2018 FDMA86265P P-Channel PowerTrench® MOSFET -150 V, -1 A, 1.2 Ω Features „ Max rDS(on) = 1.2 Ω at VGS = -10 V, ID = -1 A...

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, -1 A, 1.2 Ω Features „ Max rDS(on) = 1.2 Ω at VGS = -10 V, ID = -1 A „ Max rDS(on) = 1.4 Ω at VGS = -6 V, ID = -0.9 A „ Low Profile - 0.8 mm maximum in the new package MicroFET 2x2 mm „ Very low RDS-on mid voltage P-channel silicon technology optimised for low Qg „ This product is optimised for fast switching applications as well as load switch applications „ 100% UIL tested „ RoHS Compliant General Description This P-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® process that has been optimized for the on-state resistance and yet maintain superior switching performance.

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