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Fairchild Semiconductor Electronic Components Datasheet

FDMA86265P Datasheet

MOSFET

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May 2014
FDMA86265P
P-Channel PowerTrench® MOSFET
-150 V, -1 A, 1.2 Ω
Features
General Description
„ Max rDS(on) = 1.2 Ω at VGS = -10 V, ID = -1 A
„ Max rDS(on) = 1.4 Ω at VGS = -6 V, ID = -0.9 A
„ Low Profile - 0.8 mm maximum in the new package MicroFET
2x2 mm
This P-Channel MOSFET is produced using Fairchild
Semiconductor‘s advanced PowerTrench® process that
has been optimized for the on-state resistance and yet maintain
superior switching performance.
„ Very low RDS-on mid voltage P-channel silicon technology
optimised for low Qg
„ This product is optimised for fast switching applications as
well as load switch applications
Applications
„ Active Clamp Switch
„ Load Switch
„ 100% UIL tested
„ RoHS Compliant
Pin 1
Drain
DD G
Source
BBootttotomm DDraraininCCoonnta- ct
DD
DD
DD S
MicroFET 2X2 (Bottom View)
G
S
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol
VDS
VGS
ID
EAS
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Pulsed
TA = 25 °C
Single Pulse Avalanche Energy
Power Dissipation
TA = 25 °C
Power Dissipation
TA = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 3)
(Note 1a)
(Note 1b)
Ratings
-150
±25
-1
-2
6
2.4
0.9
-55 to + 150
Units
V
V
A
mJ
W
°C
RθJA
RθJA
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1a)
(Note 1b)
52
145
°C/W
Device Marking
265
Device
FDMA86265P
Package
MicroFET 2X2
Reel Size
7 ’’
Tape Width
12 mm
Quantity
3000 units
©2014 Fairchild Semiconductor Corporation
FDMA86265P Rev.C
1
www.fairchildsemi.com


Fairchild Semiconductor Electronic Components Datasheet

FDMA86265P Datasheet

MOSFET

No Preview Available !

Electrical Characteristics TJ = 25 °C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
ΔBVDSS
ΔTJ
IDSS
IGSS
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
ID = -250 μA, VGS = 0 V
ID = -250 μA, referenced to 25 °C
VDS = -120 V, VGS = 0 V
VGS = ±25 V, VDS = 0 V
-150
-125
V
mV/°C
-1
±100
μA
nA
On Characteristics
VGS(th)
ΔVGS(th)
ΔTJ
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
rDS(on)
Static Drain to Source On Resistance
gFS Forward Transconductance
VGS = VDS, ID = -250 μA
ID = -250 μA, referenced to 25 °C
VGS = -10 V, ID = -1 A
VGS = -6 V, ID = -0.9 A
VGS = -10 V, ID = -1 A, TJ = 125 °C
VDS = -10 V, ID = -1 A
-2
-3.2 -4
V
5 mV/°C
0.86
0.95
1.53
1.9
1.2
1.4
2.2
Ω
S
Dynamic Characteristics
Ciss
Coss
Crss
Rg
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
VDS = -75 V, VGS = 0 V,
f = 1 MHz
158 210 pF
16 25 pF
0.7 5 pF
0.1 3 7.5 Ω
Switching Characteristics
td(on)
tr
td(off)
tf
Qg(TOT)
Qgs
Qgd
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Total Gate Charge
Gate to Drain “Miller” Charge
VDD = -75 V, ID = -1 A,
VGS = -10 V, RGEN = 6 Ω
VGS = 0 V to -10 V VDD = -75 V,
ID = -1 A
5.8 12 ns
2.2 10 ns
8 16 ns
6.4 13 ns
2.8 4 nC
0.8 nC
0.7 nC
Drain-Source Diode Characteristics
VSD
Source to Drain Diode Forward Voltage VGS = 0 V, IS = -1 A
(Note 2)
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IF = -1 A, di/dt = 100 A/μs
-0.87
50
78
-1.3
80
124
V
ns
nC
NOTES:
1. RθJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by
the user's board design.
a. 52 °C/W when mounted
on a 1 in2 pad of 2 oz copper.
b. 145 °C/W when mounted on a
minimum pad of 2 oz copper.
2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.
3. Starting TJ = 25 °C; P-ch: L =3 mH, IAS = -2 A, VDD = -150 V, VGS = -10 V. 100% test at L = 0.1 mH, IAS = -9 A.
©2014 Fairchild Semiconductor Corporation
FDMA86265P Rev.C
2
www.fairchildsemi.com


Part Number FDMA86265P
Description MOSFET
Maker Fairchild Semiconductor
Total Page 8 Pages
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