FDMA86265P Datasheet | Fairchild Semiconductor

FDMA86265P P-Channel PowerTrench® MOSFET August 2018 P-Channel PowerTrench® MOSFET -150 V, -1 A, 1.2 Ω Features - Max rDS(on) = 1.2 Ω at VGS = -10 V, ID = -1 A - Max rDS(on) = 1.4 Ω at VGS = -6 V, ID = -0.9 A - Low Profile - 0.8 mm maximum in the new package MicroFET 2x2 mm - Very low RDS-on mid voltage P-channel silicon technology optimised for low Qg - This product is optimised for fast switching applications as well as load switch applications - 100% UIL tested - RoHS pliant General Description This P-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® process that has been optimized for the on-state resistance and yet maintain superior...