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Fairchild Semiconductor Electronic Components Datasheet

FDMB2307NZ Datasheet

Dual Common Drain N-Channel PowerTrench MOSFET

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FDMB2307NZ
October 2011
Dual Common Drain N-Channel PowerTrench® MOSFET
20 V, 9.7 A, 16.5 mΩ
Features
„ Max rS1S2(on) = 16.5 mΩ at VGS = 4.5 V, ID = 8 A
„ Max rS1S2(on) = 18 mΩ at VGS = 4.2 V, ID = 7.4 A
„ Max rS1S2(on) = 21 mΩ at VGS = 3.1 V, ID = 7 A
„ Max rS1S2(on) = 24 mΩ at VGS = 2.5 V, ID = 6.7 A
„ Low Profile - 0.8 mm maximum - in the new package
MicroFET 2x3 mm
„ HBM ESD protection level > 2 kV (Note 3)
„ RoHS Compliant
General Description
This device is designed specifically as a single package solution
for Li-Ion battery pack protection circuit and other ultra-portable
applications. It features two common drain N-channel
MOSFETs, which enables bidirectional current flow, on
Fairchild’s advanced PowerTrench® process with state of the art
MicroFET Leadframe, the FDMB2307NZ minimizes both PCB
space and rS1S2(on).
Application
„ Li-Ion Battery Pack
Pin 1
Pin 1
S1 S1 G1
D1/D2
G2 4
S2 5
S2 6
3 G1
2 S1
1 S1
S2 S2 G2
Top Bottom
MLP 2x3
MOSFET Maximum Ratings TA = 25°C unless otherwise noted
Symbol
VS1S2
VGS
IS1S2
PD
TJ, TSTG
Parameter
Source1 to Source2 Voltage
Gate to Source Voltage
Source1 to Source2 Current -Continuous
-Pulsed
TA = 25°C
Power Dissipation
TA = 25 °C
Power Dissipation
TA = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 4)
(Note 1a)
(Note 1a)
(Note 1b)
Ratings
20
±12
9.7
40
2.2
0.8
-55 to +150
Units
V
V
A
W
°C
RθJA
RθJA
Thermal Resistance, Junction to Ambient(Dual Operation)
Thermal Resistance, Junction to Ambient(Dual Operation)
Package Marking and Ordering Information
(Note 1a)
(Note 1b)
57
161
°C/W
Device Marking
307
Device
FDMB2307NZ
Package
MLP 2x3
Reel Size
7’’
Tape Width
8 mm
Quantity
3000 units
©2011 Fairchild Semiconductor Corporation
FDMB2307NZ Rev.C5
1
www.fairchildsemi.com
Datasheet pdf - http://www.DataSheet4U.net/


Fairchild Semiconductor Electronic Components Datasheet

FDMB2307NZ Datasheet

Dual Common Drain N-Channel PowerTrench MOSFET

No Preview Available !

www.DataSheet.co.kr
Electrical Characteristics TJ = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off Characteristics
IS1S2
IGSS
Zero Gate Voltage Source1 to Source2
Current
Gate to Source Leakage Current
VS1S2 = 16 V, VGS = 0 V
VGS = 12 V, VS1S2 = 0 V
1 μA
10 μA
On Characteristics
VGS(th)
Gate to Source Threshold Voltage
rS1S2(on)
Static Source1 to Source2 On Resistance
gFS Forward Transconductance
VGS = VS1S2, IS1S2 = 250 μA
VGS = 4.5 V, IS1S2 = 8 A
VGS = 4.2 V, IS1S2 = 7.4 A
VGS = 3.1 V, IS1S2 = 7 A
VGS = 2.5 V, IS1S2 = 6.7 A
VGS = 4.5 V, IS1S2 = 8 A,
TJ = 125 °C
VS1S2 = 5 V, IS1S2 = 8 A
0.6 1 1.5 V
10.5 13.5 16.5
11 14 18
11.5 16
12 18
21 mΩ
24
11 20 29
41 S
Dynamic Characteristics
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VS1S2 = 10 V, VGS = 0 V,
f = 1 MHz
1760
229
211
2640
345
320
pF
pF
pF
Switching Characteristics
td(on)
tr
td(off)
tf
Qg
Qg
Qgs
Qgd
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Total Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
VS1S2 = 10 V, IS1S2 = 8 A,
VGS = 4.5 V, RGEN = 6 Ω
VGS = 0 V to 5 V
VGS = 0 V to 4.5 V VS1S2 = 10 V,
IS1S2 = 8 A
12 22 ns
19 34 ns
32 51 ns
9.5 17 ns
20 28 nC
18 25 nC
2.8 nC
5.3 nC
Source1- Source2 Diode Characteristics
Ifss Maximum Continuous Source1-Source2 Diode Forward Current
Vfss
Source1 to Source2 Diode Forward Voltage
VG1S 1= 0 V, VG2S2= 4.5 V,
Ifss= 8 A
(Note 2)
8
0.8 1.2
A
V
NOTES:
1. RθJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by
the user's board design.
a. 57 °C/W when mounted on
a 1 in2 pad of 2 oz copper
b. 161 °C/W when mounted on
a minimum pad of 2 oz copper
2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.
3. The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied.
4. As an N-ch device, the negative Vgs rating is for low duty cycle pulse ocurrence only. No continuous rating is implied.
©2011 Fairchild Semiconductor Corporation
FDMB2307NZ Rev.C5
2
www.fairchildsemi.com
Datasheet pdf - http://www.DataSheet4U.net/


Part Number FDMB2307NZ
Description Dual Common Drain N-Channel PowerTrench MOSFET
Maker Fairchild Semiconductor
Total Page 7 Pages
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