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FDMB2307NZ - Dual Common Drain N-Channel MOSFET

Description

This device is designed specifically as a single package solution for Li-Ion battery pack protection circuit and other ultra-portable applications.

Features

  • Max rS1S2(on) = 16.5 mΩ at VGS = 4.5 V, ID = 8 A.
  • Max rS1S2(on) = 18 mΩ at VGS = 4.2 V, ID = 7.4 A.
  • Max rS1S2(on) = 21 mΩ at VGS = 3.1 V, ID = 7 A.
  • Max rS1S2(on) = 24 mΩ at VGS = 2.5 V, ID = 6.7 A.
  • Low Profile - 0.8 mm maximum - in the new package MicroFET 2x3 mm.
  • HBM ESD protection level > 2 kV (Note 3).
  • RoHS Compliant October 2011 General.

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www.DataSheet.co.kr FDMB2307NZ Dual Common Drain N-Channel PowerTrench® MOSFET FDMB2307NZ Dual Common Drain N-Channel PowerTrench® MOSFET 20 V, 9.7 A, 16.5 mΩ Features „ Max rS1S2(on) = 16.5 mΩ at VGS = 4.5 V, ID = 8 A „ Max rS1S2(on) = 18 mΩ at VGS = 4.2 V, ID = 7.4 A „ Max rS1S2(on) = 21 mΩ at VGS = 3.1 V, ID = 7 A „ Max rS1S2(on) = 24 mΩ at VGS = 2.5 V, ID = 6.7 A „ Low Profile - 0.8 mm maximum - in the new package MicroFET 2x3 mm „ HBM ESD protection level > 2 kV (Note 3) „ RoHS Compliant October 2011 General Description This device is designed specifically as a single package solution for Li-Ion battery pack protection circuit and other ultra-portable applications.
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