FDMB3900AN mosfet equivalent, dual n-channel mosfet.
General Description
* Max rDS(on) = 23 mΩ at VGS = 10 V, ID = 7.0 A
* Max rDS(on) = 33 mΩ at VGS = 4.5 V, ID = 5.5 A
* Fast switching speed
These N-Channel.
where the low in-line power loss and fast switching are required.
* RoHS Compliant
Pin 1 MicroFET 3X1.9
D2 5 D2 6.
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