Datasheet Details
| Part number | FDMB3900AN |
|---|---|
| Manufacturer | Fairchild (now onsemi) |
| File Size | 244.39 KB |
| Description | Dual N-Channel MOSFET |
| Datasheet |
 FDMB3900AN Datasheet
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| Part number | FDMB3900AN |
|---|---|
| Manufacturer | Fairchild (now onsemi) |
| File Size | 244.39 KB |
| Description | Dual N-Channel MOSFET |
| Datasheet |
FDMB3900AN Datasheet
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Max rDS(on) = 23 mΩ at VGS = 10 V, ID = 7.0 A Max rDS(on) = 33 mΩ at VGS = 4.5 V, ID = 5.5 A Fast switching speed These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
Low gate charge High performance trench technology for extremely low rDS(on) High power and current handling capability These devices are well suited for low voltage and battery powered applications where the low in-line power loss and fast switching are required.
RoHS Compliant Pin 1 MicroFET 3X1.9 D2 5 D2 6 D1 7 D1 8 Q2 4 G2 3 S2 Q1 2 G1 1 S1 MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS ID PD TJ, TSTG Parameter Drain to Source
FDMB3900AN Dual N-Channel PowerTrench® MOSFET FDMB3900AN Dual N-Channel PowerTrench® MOSFET 25 V, 7.
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