FDMB3900AN
Description
Max rDS(on) = 23 mΩ at VGS = 10 V, ID = 7.0 A - Max rDS(on) = 33 mΩ at VGS = 4.5 V, ID = 5.5 A - Fast switching speed These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
