FDMC0310AS Datasheet | Fairchild Semiconductor

Features General Description - Max r DS(on) = 4.4 mΩ at VGS = 10 V, ID = 19 A - Max r DS(on) = 5.2 mΩ at VGS = 4.5 V, ID = 17.5 A - Advanced package and silicon bination for low r DS(on) and high efficiency - Sync FETTM Schottky Body Diode - MSL1 robust package design - 100% UIL tested - Ro HS pliant The FDMC0310AS has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been bined to offer the lowest r DS(on) while maintaining excellent switching performance.This device has the added benefit of an efficient monolithic schottky body diode. Applications - Synchronous Rectifier for DC/DC Converters - Notebook Vcore/GPU low side switch - Networking Point of Load low side switch - Tele secondary side rectification Top Bottom Pin 1 S SG S DD D D D5 D6 D7 D8 4G 3S 2S...