FDMC15N06
Overview
These N-Channel power MOSFETs are manufactured using the innovative UItraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge.
- RDS(on) = 0.075Ω ( Typ.)@ VGS = 10V, ID = 15A
- 100% Avalanche Tested
- RoHS Compliant
