FDMC15N06 - N-Channel MOSFET

Datasheet Summary

Description

These N-Channel power MOSFETs are manufactured using the innovative UItraFET process.

Features

RDS(on) = 0.075Ω ( Typ. )@ VGS = 10V, ID = 15A.
100% Avalanche Tested.
RoHS Compliant.

Fairchild Semiconductor

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Datasheet Details

Part number	FDMC15N06
Manufacturer	Fairchild Semiconductor
File Size	651.66 KB
Description	N-Channel MOSFET
Datasheet	FDMC15N06 Datasheet
Additional preview pages of the FDMC15N06 datasheet.

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FDMC15N06 N-Channel MOSFET July 2009 FDMC15N06 N-Channel MOSFET 55V, 15A, 0.090Ω Features • RDS(on) = 0.075Ω ( Typ.)@ VGS = 10V, ID = 15A • 100% Avalanche Tested • RoHS Compliant Description These N-Channel power MOSFETs are manufactured using the innovative UItraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance.This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge.

Published: Oct 14, 2009 |