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Fairchild Semiconductor Electronic Components Datasheet

FDMC2674 Datasheet

N-Channel UltraFET Trench MOSFET

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May 2006
FDMC2674
N-Channel UltraFET Trench® MOSFET
220V, 1A, 366m
Features
General Description
tm
„ Max rDS(on) = 366mat VGS = 10V, ID = 1A
„ Typ Qg = 12.7nC at VGS = 10V
„ Low Miller charge
„ Low Qrr Body Diode
„ Optimized efficiency at high frequencies
„ UIS Capability ( Single Pulse and Re-
petitive Pulse)
UltraFET® device combines characteristics that enable
benchmark efficiency in power conversion applications.
Optimized for rDS(on), low ESR, low total and Miller gate
charge, these devices are ideal for high frequency DC to
DC converters.
Applications
„ DC/DC converters and Off-Line UPS
„ Distributed Power Architectures
„ RoHS Compliant
Bottom
6 78
5
Top
DD
D
D
4 321
MLP 3.3x3.3
G
S SS
5
6
7
8
4
3
2
1
MOSFET Maximum Ratings TA = 25°C unless otherwise noted
Symbol
VDS
VGS
ID
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Pulsed
Parameter
EAS
PD
TJ, TSTG
Single Pulse Avalanche Energy
Power Dissipation for Single Operation
Operating and Storage Temperature
(Note 3)
Ratings
220
±20
1
13.8
13
2.4
-55 to 150
Units
V
V
A
mJ
W
°C
Thermal Characteristics
RθJA
RθJA
Thermal Resistance , Junction to Ambient
Thermal Resistance , Junction to Ambient
(Note 1a)
(Note 1b)
52
108
°C/W
°C/W
Package Marking and Ordering Information
Device Marking Device
FDMC2674 FDMC2674
Package
MLP 3.3 x 3.3
Reel Size
7’’
Tape Width
12mm
Quantity
3000 units
©2006 Fairchild Semiconductor Corporation
FDMC2674 Rev. E
1
www.fairchildsemi.com


Fairchild Semiconductor Electronic Components Datasheet

FDMC2674 Datasheet

N-Channel UltraFET Trench MOSFET

No Preview Available !

Electrical Characteristics TJ = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
BVDSS
TJ
IDSS
IGSS
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
ID = 250µA, VGS = 0V
ID = 250µA, referenced to
25°C
VDS = 176V, VGS = 0V
VGS = ±20V,
220 V
248 mV/°C
1
±100
µA
nA
On Characteristics (Note 2)
VGS(th)
VGS(th)
TJ
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
rDS(on)
Drain to Source On Resistance
VGS = VDS, ID = 250µA
ID = 250µA, referenced to
25°C
VGS = 10V, ID = 1A
VTJG=S1=5100oCV, ID = 1A,
2 3.4 4
V
-10.2
mV/°C
305 366
678 814 m
Dynamic Characteristics
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VDS =100V, VGS = 0V,
f = 1MHz
880 1180
70 95
11 20
pF
pF
pF
Switching Characteristics (Note 2)
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate to Drain Charge
VDD = 100V, ID = 1A
VGS = 10V, RGS = 2.4
VDD = 15V, VGS = 10V,
ID = 1A, IG = 1.0mA
9
13
15
21
12.7
3.8
2.9
18
23
27
34
18
ns
ns
ns
ns
nC
nC
nC
Drain-Source Diode Characteristics
VSD Source to Drain Diode Forward Voltage VGS = 0V, IS = 1A
0.8 1.5
V
trr Reverse Recovery Time
IF = 1A, di/dt = 100A/µs
60 ns
Qrr Reverse Recovery Charge
IF = 1A, di/dt = 100A/µs
109 nC
Notes:
1: RθJA is determined with the device mounted on a 1in2 oz.copper pad on a 1.5x1.5 in board of FR-4 material .RθJC are guaranteed by design while RθJA is
determined by the user’s board design.
a. 52°C/W when mounted on
a 1 in2 pad of 2 oz copper
b. 108°C/W when mounted on
a minimum pad of 2 oz copper
2: Pulse Test:Pulse Width < 300µs, Duty Cycle < 2.0%.
3: Starting TJ = 25°C, L = 3mH, IAS = 3A, VDD = 50V, VGS = 10V.
FDMC2674 Rev. E
2 www.fairchildsemi.com


Part Number FDMC2674
Description N-Channel UltraFET Trench MOSFET
Maker Fairchild Semiconductor
Total Page 6 Pages
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