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FDMC2674 - N-Channel UltraFET Trench MOSFET

General Description

Max rDS(on) = 366mΩ at VGS = 10V, ID = 1A Typ Qg = 12.7nC at VGS = 10V Low Miller charge Low Qrr Body Diode Optimized efficiency at high frequencies UIS Capability ( Single Pulse and Repetitive Pulse) RoHS Compliant tm UltraFET®

Key Features

  • General.

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www.DataSheet4U.com FDMC2674 N-Channel UltraFET Trench® MOSFET May 2006 FDMC2674 N-Channel UltraFET Trench® MOSFET 220V, 1A, 366mΩ Features General Description „ Max rDS(on) = 366mΩ at VGS = 10V, ID = 1A „ Typ Qg = 12.7nC at VGS = 10V „ Low Miller charge „ Low Qrr Body Diode „ Optimized efficiency at high frequencies „ UIS Capability ( Single Pulse and Repetitive Pulse) „ RoHS Compliant tm UltraFET® device combines characteristics that enable benchmark efficiency in power conversion applications. Optimized for rDS(on), low ESR, low total and Miller gate charge, these devices are ideal for high frequency DC to DC converters. Applications „ DC/DC converters and Off-Line UPS „ Distributed Power Architectures Bottom 5 6 7 8 D 1 D D D Top 5 6 S G 4 3 2 1 4 3 2 7 8 S S MLP 3.