FDMC6296 Datasheet | Fairchild Semiconductor

FDMC6296 N-Channel Power Trench® MOSFET Single N-Channel Logic-Level Power Trench® MOSFET 30 V, 11.5 A, 10.5 mΩ Features - Max rDS(on) = 10.5 mΩ at VGS = 10 V, ID = 11.5 A - Max rDS(on) = 15 mΩ at VGS = 4.5 V, ID = 10 A - Low Qg, Qgd and Rg for efficient switching performance - RoHS pliant November 2010 General Description This single N-Channel MOSFET in the thermally efficient MicroFET Package has been specifically designed to perform well in Point of Load converters. Providing an optimized balance between rDS(on) and gate charge this device can be effectively used as a “high side” control swtich or “low side” synchronous rectifier. Application - Point of Load Converters -...