FDMC6679AZ Datasheet | Fairchild Semiconductor

FDMC6679AZ P-Channel PowerTrench® MOSFET July 2009 P-Channel PowerTrench® MOSFET -30 V, -20 A, 10 mΩ Features General Description The FDMC6679AZ has been designed to minimize losses in load switch applications. Advancements in both silicon and package technologies have been bined to offer the lowest rDS(on) and ESD protection. - Max rDS(on) = 10 mΩ at VGS = -10 V, ID = -11.5 A - Max rDS(on) = 18 mΩ at VGS = -4.5 V, ID = -8.5 A - HBM ESD protection level of 8 kV typical(note 3) - Extended VGSS range (-25 V) for battery applications - High performance trench technology for extremely low rDS(on) - High power and current handling capability - Termination is Lead-free and RoHS...