Datasheet Details
| Part number | FDMC8030 |
|---|---|
| Manufacturer | Fairchild (now onsemi) |
| File Size | 370.88 KB |
| Description | Dual N-Channel Power MOSFET |
| Download | FDMC8030 Download (PDF) |
|
|
| Part number | FDMC8030 |
|---|---|
| Manufacturer | Fairchild (now onsemi) |
| File Size | 370.88 KB |
| Description | Dual N-Channel Power MOSFET |
| Download | FDMC8030 Download (PDF) |
|
|
|
This device includes two 40V N-Channel MOSFETs in a dual Power 33 (3 mm X 3 mm MLP) package.
The package is enhanced for exceptional thermal performance.
Applications Battery Protection Load Switching Point of Load Pin 1 G1 S1 S1 S1 G2 D1 D2 S2 S2 Bottom Drain2 Contact 8 7 6 5 Q2 1 G1 2 S1 3 S1 4 S1 Q1 G2 S2 S2 S2 Power 33 S2 Bottom Drain1 Contact MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Pulsed Single Pulse Avalanche Energy Power Dissipation Power Dissipation TA = 25 °C TA = 25 °C (Note 3) (Note 1a) (Note 1b) TA = 25 °C (Note 4) (Note 1a) Ratings 40 ±12 12 50 21 1.9 0.8 -55 to +150 Units V V A mJ W °C Operating and Storage Junction Temperature Range Thermal Characteristics RθJA RθJA Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Ambient (Note 1a) (Note 1b) 65 155 °C/W Package Marking and Ordering Information Device Marking FDMC8030 Device FDMC8030 Package Power 33 Reel Size 13 ’’ Tape Width 12 mm Quantity 3000 units ©2011 Fairchild Semiconductor Corporation FDMC8030 Rev.C 1 www.fairchildsemi.com Free Datasheet http://www.datasheet4u.com/ FDMC8030 Dual N-Channel Power Trench® MOSFET Electrical Characteristics TJ = 25 °C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS ΔBVDSS ΔTJ IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current ID = 250 μA, VGS = 0 V ID = 250 μA, referenced to 25 °C VDS = 32 V, VGS = 0 V 40 19 1 100 V mV/°C μA nA Gat
FDMC8030 Dual N-Channel Power Trench® MOSFET August 2011 FDMC8030 Dual N-Channel Power Trench® MOSFET 40 V, 12 A, 10.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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FDMC8030 | Dual N-Channel MOSFET | ON Semiconductor |
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