FDMC86260 - N-Channel Power Trench MOSFET

Fairchild Semiconductor

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Datasheet Details

Part number	FDMC86260
Manufacturer	Fairchild Semiconductor
File Size	214.20 KB
Description	N-Channel Power Trench MOSFET
Datasheet	FDMC86260-FairchildSemiconductor.pdf

FDMC86260 Product details

Description

Max rDS(on) = 34 mΩ at VGS = 10 V, ID = 5.4 A Max rDS(on) = 44 mΩ at VGS = 6 V, ID = 4.8 A High performance technology for extremely low rDS(on) 100% UIL Tested Termination is Lead-free RoHS Compliant This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.Application

Features

General.

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Published: Aug 20, 2015 |