Datasheet Details
| Part number | FDMC86260ET150 |
|---|---|
| Manufacturer | Fairchild (now onsemi) |
| File Size | 187.01 KB |
| Description | MOSFET |
| Datasheet |
 FDMC86260ET150 Datasheet
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| Part number | FDMC86260ET150 |
|---|---|
| Manufacturer | Fairchild (now onsemi) |
| File Size | 187.01 KB |
| Description | MOSFET |
| Datasheet |
FDMC86260ET150 Datasheet
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|
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Extended TJ rating to 175°C Max rDS(on) = 34 mΩ at VGS = 10 V, ID = 5.4 A Max rDS(on) = 44 mΩ at VGS = 6 V, ID = 4.8 A High performance technology for extremely low rDS(on) 100% UIL Tested Termination is Lead-free This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
Application DC-DC Conversion RoHS Compliant Pin 1 Pin 1 S S SG S S D D D DD D Top Bottom Power 33 SD GD MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Continuous -Continuous -Pulsed TC = 25 °C TC = 100 °C TA = 25 °C Single Pulse
FDMC86260ET150 N-Channel Power Trench® MOSFET FDMC86260ET150 N-Channel Power Trench® MOSFET 150 V, 25 A, 34 mΩ January.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
FDMC86260ET150 | N-Channel MOSFET | ON Semiconductor |
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