FDMC86340ET80 Datasheet - Fairchild Semiconductor

MOSFET

FDMC86340ET80 General Description

* Extended TJ rating to 175°C * Shielded Gate MOSFET Technology * Max rDS(on) = 6.5 mΩ at VGS = 10 V, ID = 14 A * Max rDS(on) = 8.5 mΩ at VGS = 8 V, ID = 12 A * High performance technology for extremely low rDS(on) * Termination is Lead-free This N-C.

FDMC86340ET80 Datasheet (199.69 KB)

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FDMC86340ET80

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Fairchild Semiconductor

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199.69 KB

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Mosfet.
FDMC86340ET80 N-Channel Shielded Gate Power Trench® MOSFET January 2015 FDMC86340ET80 N-Channel Shielded Gate Power Trench® MOSFET 80 V, 68 A, 6.5 .

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FDMC86340ET80 General Description

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