FDMC86570LET60 Datasheet - Fairchild Semiconductor

MOSFET

FDMC86570LET60 Features

* Extended TJ rating to 175°C

* Shielded Gate MOSFET Technology

* Max rDS(on) = 4.3 mΩ at VGS = 10 V, ID = 18 A

* Max rDS(on) = 6.5 mΩ at VGS = 4.5 V, ID = 15 A

* High performance technology for extremely low rDS(on)

* Termination is Lead-free

FDMC86570LET60 General Description

This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized for the on-state resistance and yet maintain superior switching performance. Application * DC-DC Conversion * P.

FDMC86570LET60 Datasheet (201.85 KB)

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Datasheet Details

Part number:

FDMC86570LET60

Manufacturer:

Fairchild Semiconductor

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201.85 KB

Description:

Mosfet.
FDMC86570LET60 N-Channel Shielded Gate PowerTrench® MOSFET January 2015 FDMC86570LET60 N-Channel Shielded Gate PowerTrench® MOSFET 60 V, 87 A, 4.3 m.

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FDMC86570LET60 MOSFET Fairchild Semiconductor

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FDMC86570LET60 Features

FDMC86570LET60 General Description

Datasheet Details

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