Datasheet Details
| Part number | FDME430NT |
|---|---|
| Manufacturer | Fairchild (now onsemi) |
| File Size | 212.02 KB |
| Description | N-Channel PowerTrench MOSFET |
| Datasheet |
 FDME430NT Datasheet
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| Part number | FDME430NT |
|---|---|
| Manufacturer | Fairchild (now onsemi) |
| File Size | 212.02 KB |
| Description | N-Channel PowerTrench MOSFET |
| Datasheet |
FDME430NT Datasheet
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Max rDS(on) = 40 mΩ at VGS = 4.5 V, ID = 6 A Max rDS(on) = 51 mΩ at VGS = 2.5 V, ID = 5 A Max rDS(on) = 71 mΩ at VGS = 1.8 V, ID = 4 A Low profile: 0.55 mm maximum in the new package MicroFET 1.6x1.6 Thin Free from halogenated compounds and antimony oxides RoHS Compliant This single N-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced PowerTrench® process to optimize the rDS(ON) @ VGS = 1.8 V on special MicroFET leadframe.
Applications Li-lon Battery Pack Baseband Switch Load Switch DC-DC Conversion G D Pin 1 D S S D D DD DD GS BOTTOM MicroFET 1.6x1.6 Thin TOP MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS ID PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Pulsed TA = 25 °C Power Dissipation for Single Operation TA = 25 °C Power Dissipation for Single Operation TA = 25 °C Operating and Storage Junction Temperature Range Thermal Characteristics (Note 1a) (Note 1a) (Note 1b) Ratings 30 ±12 6 30 2.1 0.7 -55 to +150 Units V V A W °C RθJA RθJA Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Ambient Package Marking and Ordering Information (Note 1a) (Note 1b) 60 175 °C/W Device Marking YA Device FDME430NT Package MicroFET 1.6x1.6 Thin Reel Size 7 ’’ Tape Width 8 mm Quantity 5000 units ©2012 Fairchild Semiconductor Corporation FDME430NT Rev.C3 1 www.fairchildsemi.com FDME430NT N-Channel PowerTrench® MOSFET Electrical Characteristics TJ = 25 °C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS ΔBVDSS ΔTJ IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Source Leakage Current ID = 250 μA, VGS = 0 V ID = 250 μA, referenced to
FDME430NT N-Channel PowerTrench® MOSFET October 2013 FDME430NT N-Channel PowerTrench® MOSFET 30 V, 6 A, 40.
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