FDMF6705B Datasheet | Fairchild Semiconductor

Description The XS™ Dr MOS family is Fairchild’s next-generation, fully optimized, ultra-pact, integrated MOSFET plus driver power stage solution for high-current, highfrequency, synchronous buck DC-DC applications. The FDMF6705B integrates a driver IC, two power MOSFETs, and a bootstrap Schottky diode into a thermally enhanced, ultra-pact 6x6mm PQFN package. With an integrated approach, the plete switching power stage is optimized with regards to driver and MOSFET dynamic performance, system inductance, and power MOSFET RDS(ON). XS™ Dr MOS uses Fairchild's high-performance Power Trench® MOSFET technology, which dramatically reduces switch ringing, eliminating the need for a snubber circuit in most buck converter applications. A new driver IC with reduced dead times and propagation delays further enhances the performance of this part. A thermal warning function warns of a potential over-temperature situation. The FDMF6705B also incorporates features , such as Skip Mode (SMOD), for improved light-load efficiency, along with a three-state 3.3V PWM input for patibility with a wide range of PWM controllers. Features Over 93% Peak-Efficiency High-Current Handling of 40A at 12VIN High-Current Handling of 38A at 19VIN High-Performance PQFN Copper-Clip Package 3-State 3.3V PWM Input Driver Skip-Mode SMOD# (Low-Side Gate Turn-Off) Input Thermal Warning Flag for Over-Temperature Condition Driver Output Disable Function (DISB# Pin) Internal Pull-Up and Pull-Down for SMOD# and DISB# Inputs, Respectively Fairchild Power Trench® Technology MOSFETs for Clean Voltage Waveforms and Reduced Ringing Fairchild Sync FET™ (Integrated Schottky Diode) Technology in the Low-Side MOSFET Integrated Bootstrap Schottky Diode Adaptive Gate Drive Timing for Shoot-Through Protection Under-Voltage Lockout (UVLO) Optimized for Switching Frequencies up to 1MHz Low-Profile SMD Package Fairchild Green Packaging and Ro HS pliance Based on the Intel® 4.0 Dr MOS Standard Applications - - - - - - -...