FDMF6706C Datasheet | Fairchild Semiconductor

Description The XS™ Dr MOS family is Fairchild’s next-generation, fully optimized, ultra-pact, integrated MOSFET plus driver power stage solutions for high-current, highfrequency, synchronous buck DC-DC applications. The FDMF6706C integrates a driver IC, two power MOSFETs, and a bootstrap Schottky diode into a thermally enhanced, ultra-pact 6x6mm PQFN package. With an integrated approach, the plete switching power stage is optimized with regards to driver and MOSFET dynamic performance, system inductance, and Power MOSFET RDS(ON). XS™ Dr MOS uses Fairchild's high-performance Power Trench® MOSFET technology, which dramatically reduces switch ringing, eliminating the need for a snubber circuit in most buck converter applications. A new driver IC with reduced dead times and propagation delays further enhances the performance of this part. A thermal warning function has been included to warn of a potential over-temperature situation. The FDMF6706C also incorporates features , such as Skip Mode (SMOD), for improved light-load efficiency along with a 3-state 5V PWM input for patibility with a wide range of PWM controllers. Features Over 93% Peak-Efficiency High-Current Handling of 43A High-Performance PQFN Copper Clip Package 3-State 5V PWM Input Driver Shorter Propagation Delays than FDMF6704 Shorter Dead Times than FDMF6704 Skip-Mode SMOD# (Low-Side Gate Turn Off) Input Thermal Warning Flag for Over-Temperature Condition Driver Output Disable Function (DISB# Pin) Internal Pull-Up and Pull-Down for SMOD# and DISB# Inputs, Respectively Fairchild Power Trench® Technology MOSFETs for Clean Voltage Waveforms and Reduced Ringing Fairchild Sync FET™ (Integrated Schottky Diode) Technology in the Low-Side MOSFET Integrated Bootstrap Schottky Diode Adaptive Gate Drive Timing for Shoot-through Protection Under-Voltage Lockout (UVLO) Optimized for Switching Frequencies up to 1MHz Low-Profile SMD Package Fairchild Green Packaging and Ro HS pliant Based on the Intel® 4.0 Dr MOS...