FDMF6707B Datasheet | Fairchild Semiconductor

- Extra-Small High-Performance, High-Frequency Dr MOS Module March 2012 - Extra-Small, High-Performance, High Frequency Dr MOS Module Benefits - - - - - - - - - - - - - - - - - - - - - Ultra-pact 6x6mm PQFN, 72% Space-Saving pared to Conventional Discrete Solutions Fully Optimized System Efficiency Clean Switching Waveforms with Minimal Ringing High-Current Handling Description The XS™ Dr MOS family is Fairchild’s next-generation, fully optimized, ultra-pact, integrated MOSFET plus driver power stage solution for high-current, highfrequency, synchronous buck DC-DC applications. The FDMF6707B integrates a driver IC, two power MOSFETs, and a bootstrap Schottky diode into a thermally enhanced, ultra-pact 6x6mm PQFN package. With an integrated approach, the plete switching power stage is optimized for driver and MOSFET dynamic performance, system inductance, and power MOSFET RDS(ON). XS™ Dr MOS uses Fairchild's highperformance Power Trench® MOSFET technology, which dramatically reduces switch ringing, eliminating the snubber circuit in most buck converter applications. A new driver IC with reduced dead times and propagation delays further enhances performance. A thermal warning function warns of potential overtemperature situations. FDMF6707B also incorporates Features such as Skip Mode (SMOD) for improved lightload efficiency, along with a 3-state 3.3V PWM input for patibility with a wide range of PWM controllers. Features Over 93% Peak-Efficiency High-Current Handling of 50A High-Performance PQFN Copper-Clip Package 3-State 3.3V PWM Input Driver Skip-Mode SMOD# (Low-Side Gate Turn Off) Input Thermal Warning Flag for Over-Temperature Condition Driver Output Disable Function (DISB# Pin) Internal Pull-Up and Pull-Down for SMOD# and DISB# Inputs, Respectively Fairchild Power Trench® Technology MOSFETs for Clean Voltage Waveforms and Reduced Ringing Fairchild Sync FET™ (Integrated Schottky Diode) Technology in the Low-Side MOSFET...