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FDMJ1028N Datasheet N-Channel 2.5V Specified PowerTrench MOSFET

Manufacturer: Fairchild (now onsemi)

Overview: FDMJ1028N N-Channel 2.5V Specified PowerTrench® MOSFET June 2006 FDMJ1028N N-Channel 2.5V Specified PowerTrench® MOSFET 20V, 3.

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General Description

„ Max rDS(on) = 90mΩ at VGS = 4.5V „ Max rDS(on) = 130mΩ at VGS = 2.5V „ Low gate charge „ High performance trench technology for extremely low rDS(on) „ RoHS Compliant This dual N-Channel 2.5V specified MOSFET uses Fairchild's advanced low voltage PowerTrench process.

The rDS(on) and thermal properties of the device are optimized for battery power management applications.

Applications „ Battery management „ Baseband Switches Bottom Drain Contact 43 52 61 Bottom Drain Contact MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol VDS VGS ID Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Pulsed Parameter PD Power Dissipation for Single Operation (Note 1a) (Note 1b) TJ, TSTG Operating and Storage Temperature Thermal Characteristics RθJA Thermal Resistance , Junction to Ambient (Note 1a) Package Marking and Ordering Information Device Marking 028 Device FDMJ1028N Reel Size 7’’ Tape Width 8mm Ratings 20 ±12 3.2 12 1.4 0.8 -55 to +150 Units V V A W °C 89 °C/W Quantity 3000 units ©2006 Fairchild Semiconductor Corporation FDMJ1028N Rev.

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