General Description
* Max rDS(on) = 90mΩ at VGS = 4.5V
* Max rDS(on) = 130mΩ at VGS = 2.5V
* Low gate charge
* High performance trench technology for ex.

Applications
* Battery management
* Baseband Switches Bottom Drain Contact 43 52 61 Bottom Drain Contact MO.

* Max rDS(on) = 90mΩ at VGS = 4.5V
* Max rDS(on) = 130mΩ at VGS = 2.5V
* Low gate charge
* High performance trench technology for extremely low rDS(on)
* RoHS Compliant This dual N-Channel 2.5V specified MOSFET uses Fairchild's .

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