FDMS3600S mosfet equivalent, mosfet.
General Description
Q1: N-Channel
* Max rDS(on) = 5.6 mΩ at VGS = 10 V, ID = 15 A
* Max rDS(on) = 8.1 mΩ at VGS = 4.5 V, ID = 14 A
Q2: N-Channel
* Max rDS(o.
* Computing
* MOSFET integration enables optimum layout for lower circuit inductance and reduced switch node ri.
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