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FDMS7580 - MOSFET

Description

Max rDS(on) = 7.5 mΩ at VGS = 10 V, ID = 15 A Max rDS(on) = 11.1 mΩ at VGS = 4.5 V, ID = 12 A Advanced Package and Silicon combination for low rDS(on) and high efficiency Next generation enhanced body diode technology, engineered for soft recovery M

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Datasheet Details

Part number FDMS7580
Manufacturer Fairchild Semiconductor
File Size 321.89 KB
Description MOSFET
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FDMS7580 N-Channel Power Trench® MOSFET October 2014 FDMS7580 N-Channel Power Trench® MOSFET 25 V, 7.5 mΩ Features General Description „ Max rDS(on) = 7.5 mΩ at VGS = 10 V, ID = 15 A „ Max rDS(on) = 11.1 mΩ at VGS = 4.5 V, ID = 12 A „ Advanced Package and Silicon combination for low rDS(on) and high efficiency „ Next generation enhanced body diode technology, engineered for soft recovery „ MSL1 robust package design This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on), fast switching speed and body diode reverse recovery performance.
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