FDMS7580
Description
Max rDS(on) = 7.5 mΩ at VGS = 10 V, ID = 15 A - Max rDS(on) = 11.1 mΩ at VGS = 4.5 V, ID = 12 A - Advanced Package and Silicon bination for low rDS(on) and high efficiency - Next generation enhanced body diode technology, engineered for soft recovery - MSL1 robust package design This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers.
