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Fairchild Semiconductor Electronic Components Datasheet

FDMS7608S Datasheet

Dual N-Channel PowerTrench MOSFET

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FDMS7608S pdf
June 2011
FDMS7608S
Dual N-Channel PowerTrench® MOSFET
Q1: 30 V, 22 A, 10.0 mΩ Q2: 30 V, 30 A, 6.3 mΩ
Features
General Description
Q1: N-Channel
„ Max rDS(on) = 10.0 mΩ at VGS = 10 V, ID = 12 A
„ Max rDS(on) = 13.6 mΩ at VGS = 4.5 V, ID = 10 A
Q2: N-Channel
„ Max rDS(on) = 6.3 mΩ at VGS = 10 V, ID = 15 A
„ Max rDS(on) = 7.2 mΩ at VGS = 4.5 V, ID = 13 A
„ RoHS Compliant
This device includes two specialized N-Channel MOSFETs in a
dual MLP package. The switch node has been internally
connected to enable easy placement and routing of synchronous
buck converters. The control MOSFET (Q1) and synchronous
SyncFET (Q2) have been designed to provide optimal power
efficiency.
Applications
„ Computing
„ Communications
„ General Purpose Point of Load
„ Notebook VCORE
S2
S2 S2
G2
S1/D2
D1
S2
S2
Q2
D1
D1
D1
D1
D1 G1
S2
D1
Top
Bottom Pin1
G2
Q1
G1
Power 56
MOSFET Maximum Ratings TA = 25°C unless otherwise noted
Symbol
VDS
VGS
ID
EAS
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package limited)
-Continuous (Silicon limited)
-Continuous
-Pulsed
Single Pulse Avalanche Energy
Power Dissipation for Single Operation
Power Dissipation for Single Operation
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 3)
TC = 25 °C
TC = 25 °C
TA = 25 °C
(Note 4)
TA = 25°C
TA = 25°C
Q1 Q2
30 30
±20 ±20
22 30
46
121a
60
151b
50 60
29
2.21a
1.01c
33
2.51b
1.01d
-55 to +150
Units
V
V
A
mJ
W
°C
RθJA
RθJA
RθJC
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Package Marking and Ordering Information
571a
1251c
4.0
501b
1201d
3.2
°C/W
Device Marking
FDMS7608S
Device
FDMS7608S
Package
Power 56
Reel Size
13 ”
Tape Width
12 mm
Quantity
3000 units
©2011 Fairchild Semiconductor Corporation
FDMS7608S Rev.C
1
www.fairchildsemi.com


Fairchild Semiconductor Electronic Components Datasheet

FDMS7608S Datasheet

Dual N-Channel PowerTrench MOSFET

No Preview Available !

FDMS7608S pdf
Electrical Characteristics TJ = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Off Characteristics
BVDSS
ΔBVDSS
ΔTJ
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
ID = 250 μA, VGS = 0 V
ID = 1 mA, VGS = 0 V
ID = 250 μA, referenced to 25°C
ID = 10 mA, referenced to 25°C
IDSS
Zero Gate Voltage Drain Current
VDS = 24 V, VGS = 0 V
IGSS
Gate to Source Leakage Current
VGS = 20 V, VDS = 0 V
Type Min Typ Max Units
Q1 30
Q2 30
V
Q1
Q2
13
19
mV/°C
Q1
Q2
1
500
μA
Q1 100 nA
Q2 100 nA
On Characteristics
VGS(th)
Gate to Source Threshold Voltage
VGS = VDS, ID = 250 μA
VGS = VDS, ID = 1 mA
Q1 1.2 1.9 3.0
Q2 1.2 1.7 3.0
V
ΔVGS(th)
ΔTJ
Gate to Source Threshold Voltage
Temperature Coefficient
ID = 250 μA, referenced to 25°C
ID = 10 mA, referenced to 25°C
Q1
Q2
-6
-4
mV/°C
rDS(on)
Static Drain to Source On Resistance
VGS = 10 V, ID = 12 A
VGS = 4.5 V, ID = 10 A
VGS = 10 V, ID = 12 A, TJ = 125°C
VGS = 10 V, ID = 15 A
VGS = 4.5 V, ID = 13 A
VGS = 10 V, ID = 15 A, TJ = 125°C
Q1
Q2
7.4
10.0
10.3
10.0
13.6
13.9
4.8 6.3
6.0 7.2
6.6 8.6
mΩ
gFS Forward Transconductance
VDD = 5 V, ID = 12 A
VDD = 5 V, ID = 15 A
Q1 54
Q2 76
S
Dynamic Characteristics
Ciss Input Capacitance
Coss
Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate Resistance
Q1:
VDS = 15 V, VGS = 0 V, f = 1 MHZ
Q2:
VDS = 15 V, VGS = 0 V, f = 1 MHZ
Q1
Q2
1135 1510
1380 1835
pF
Q1
Q2
390 520
478 635
pF
Q1
Q2
42
60
65
90
pF
Q1 0.2 1.6 3.2
Q2 0.2 0.5 2.0
Ω
Switching Characteristics
td(on)
Turn-On Delay Time
tr Rise Time
td(off)
Turn-Off Delay Time
tf Fall Time
Qg(TOT)
Total Gate Charge
Qg(TOT)
Total Gate Charge
Qgs Gate to Source Charge
Qgd Gate to Drain “Miller” Charge
Q1
VDD = 15 V, ID = 12 A, RGEN = 6 Ω
Q2
VDD = 15 V, ID = 15 A, RGEN = 6 Ω
VGS = 0V to 10 V
VGS = 0V to 5 V
Q1
VDD = 15 V,
ID = 12 A
Q2
VDD = 15 V,
ID = 15 A
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
7
7
14
14
ns
3
3
10
10
ns
19
20
35
36
ns
3
2
10
10
ns
18
21
24
30
nC
9
12
14
16
nC
3.6
3.5
nC
2.5
3.0
nC
©2011 Fairchild Semiconductor Corporation
FDMS7608S Rev.C
2
www.fairchildsemi.com


Part Number FDMS7608S
Description Dual N-Channel PowerTrench MOSFET
Maker Fairchild Semiconductor
Total Page 12 Pages
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