FDMS7608S Description
N-Channel Max rDS(on) = 10.0 mΩ at VGS = 10 V, ID = 12 A Max rDS(on) = 13.6 mΩ at VGS = 4.5 V, ID = 10 A Q2: N-Channel Max rDS(on) = 6.3 mΩ at VGS = 10 V, ID = 15 A Max rDS(on) = 7.2 mΩ at VGS = 4.5 V, ID = 13 A RoHS pliant This device includes two specialized N-Channel MOSFETs in a dual MLP package. The switch node has been internally connected to enable easy placement and routing of synchronous buck...
FDMS7608S Key Features
- Max rDS(on) = 10.0 mΩ at VGS = 10 V, ID = 12 A
- Max rDS(on) = 13.6 mΩ at VGS = 4.5 V, ID = 10 A
- Max rDS(on) = 6.3 mΩ at VGS = 10 V, ID = 15 A
- Max rDS(on) = 7.2 mΩ at VGS = 4.5 V, ID = 13 A
- RoHS pliant
FDMS7608S Applications
- Continuous -Pulsed Single Pulse Avalanche Energy Power Dissipation for Single Operation Power Dissipation for Single Operation Operating and Storage Junction Te