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Fairchild Semiconductor Electronic Components Datasheet

FDMS8558SDC Datasheet

MOSFET

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FDMS8558SDC
N-Channel PowerTrench® SyncFETTM
July 2013
25 V, 90 A, 1.5 mΩ
Features
„ Dual CoolTM PQFN package
„ Max rDS(on) = 1.5 mΩ at VGS = 10 V, ID = 38 A
„ Max rDS(on) = 1.7 mΩ at VGS = 4.5 V, ID = 36 A
„ High performance technology for extremely low rDS(on)
„ SyncFETTM Schottky Body Diode
„ RoHS Compliant
General Description
This N-Channel SyncFETTM is produced using Fairchild
Semiconductor’s advanced PowerTrench® process.
Advancements in both silicon and package technologies have
been combined to offer the lowest rDS(on) while maintaining
excellent switching performance by extremely low Junction-to-
Ambient thermal resistance. This device has the added benefit
of an efficient monolithic Schottky body diode.
Applications
„ Synchronous Rectifier for DC/DC Converters
„ Telecom Secondary Side Rectification
„ High End Server/Workstation Vcore Low Side
Pin 1
S
S
S
G
D5
D6
4G
3S
D
D
D
D
Top
Power 56
Bottom
D7
D8
2S
1S
MOSFET Maximum Ratings TA = 25°C unless otherwise noted
Symbol
VDS
VGS
ID
EAS
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package limited)
-Continuous
-Pulsed
TC = 25 °C
TA = 25 °C
Single Pulse Avalanche Energy
Power Dissipation
TC = 25 °C
Power Dissipation
TA = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 3)
(Note 1a)
Ratings
25
12
90
38
140
145
89
3.3
-55 to +150
Units
V
V
A
mJ
W
°C
RθJC
RθJC
RθJA
RθJA
RθJA
RθJA
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Top Source)
(Bottom Drain)
(Note 1a)
(Note 1b)
(Note 1i)
(Note 1j)
(Note 1k)
2.8
1.4
38
81
16
23
11
°C/W
Device Marking
09DC
Device
FDMS8558SDC
Package
Power 56
Reel Size
13’’
Tape Width
12 mm
Quantity
3000 units
©2012 Fairchild Semiconductor Corporation
FDMS8558SDC Rev.C2
1
www.fairchildsemi.com


Fairchild Semiconductor Electronic Components Datasheet

FDMS8558SDC Datasheet

MOSFET

No Preview Available !

Electrical Characteristics TJ = 25 °C unless otherwise noted
Symbol
Parameter
Test Conditions
Off Characteristics
BVDSS
ΔBVDSS
ΔTJ
IDSS
IGSS
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
ID = 1 mA, VGS = 0 V
ID = 10 mA, referenced to 25 °C
VDS = 20 V, VGS = 0 V
VGS = +12 V/-8 V, VDS = 0 V
On Characteristics
VGS(th)
ΔVGS(th)
ΔTJ
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
rDS(on)
Static Drain to Source On Resistance
gFS Forward Transconductance
VGS = VDS, ID = 1 mA
ID = 10 mA, referenced to 25 °C
VGS = 10 V, ID = 38 A
VGS = 4.5 V, ID = 36 A
VGS = 10 V, ID = 38 A, TJ = 125 °C
VDS = 5 V, ID = 38 A
Dynamic Characteristics
Ciss
Coss
Crss
Rg
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
VDS = 13 V, VGS = 0 V,
f = 1 MHz
Switching Characteristics
td(on)
tr
td(off)
tf
Qg
Qg
Qgs
Qgd
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Total Gate Charge
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
VDD = 13 V, ID = 38 A,
VGS = 10 V, RGEN = 6 Ω
VGS = 0 V to 10 V
VGS = 0 V to 4.5 V VDD = 13 V,
ID = 38 A
Drain-Source Diode Characteristics
VSD Source to Drain Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
VGS = 0 V, IS = 2 A
VGS = 0 V, IS = 38 A
(Note 2)
(Note 2)
IF = 38 A, di/dt = 300 A/μs
Min
25
1.1
Typ
24
1.4
-3
1.1
1.3
1.6
317
5118
1508
195
0.9
14
8
51
7
81
38
10
9.7
0.6
0.8
35
49
Max Units
500
±100
V
mV/°C
μA
nA
2.2 V
mV/°C
1.5
1.7 mΩ
2.1
S
pF
pF
pF
Ω
ns
ns
ns
ns
nC
nC
nC
nC
0.8
V
1.2
ns
nC
©2012 Fairchild Semiconductor Corporation
FDMS8558SDC Rev.C2
2
www.fairchildsemi.com


Part Number FDMS8558SDC
Description MOSFET
Maker Fairchild Semiconductor
Total Page 10 Pages
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