FDMS86150ET100 Datasheet MOSFET

Manufacturer: Fairchild (now onsemi)

FDMS86150ET100 mosfet by Fairchild (now onsemi) - Datasheet Preview

Datasheet Details

Part number	FDMS86150ET100
Manufacturer	Fairchild (now onsemi)
File Size	234.74 KB
Description	MOSFET
Download	FDMS86150ET100 Download (PDF)

General Description

This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® process that incorporates Shielded Gate technology.

This process has been optimized for the on-state resistance and yet maintain superior switching performance.

Applications Primary DC-DC MOSFET Secondary Synchronous Rectifier Load Switch Top Pin 1 Bottom S Pin 1 S S G S S D D D D Power 56 S G D D D D MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS ID EAS PD TJ

Overview

FDMS86150ET100 N-Channel Shielded Gate PowerTrench® MOSFET FDMS86150ET100 N-Channel Shielded Gate PowerTrench® MOSFET 100 V, 128 A, 4.

Key Features

Extended TJ rating to 175°C.
Shielded Gate MOSFET Technology.
Max rDS(on) = 4.85 mΩ at VGS = 10 V, ID = 16 A.
Max rDS(on) = 7.8 mΩ at VGS = 6 V, ID = 13 A.
Advanced Package and Silicon combination for low rDS(on) and high efficiency.
MSL1 robust package design.
100% UIL tested.
RoHS Compliant General.

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