FDMS86150ET100 Datasheet - Fairchild Semiconductor

MOSFET

FDMS86150ET100 Features

* Extended TJ rating to 175°C

* Shielded Gate MOSFET Technology

* Max rDS(on) = 4.85 mΩ at VGS = 10 V, ID = 16 A

* Max rDS(on) = 7.8 mΩ at VGS = 6 V, ID = 13 A

* Advanced Package and Silicon combination for low rDS(on) and high efficiency

* MSL1 robus

FDMS86150ET100 General Description

This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized for the on-state resistance and yet maintain superior switching performance. Applications * Primary DC-DC MOSFET

FDMS86150ET100 Datasheet (234.74 KB)

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Datasheet Details

Part number:

FDMS86150ET100

Manufacturer:

Fairchild Semiconductor

File Size:

234.74 KB

Description:

Mosfet.
FDMS86150ET100 N-Channel Shielded Gate PowerTrench® MOSFET FDMS86150ET100 N-Channel Shielded Gate PowerTrench® MOSFET 100 V, 128 A, 4.85 mΩ January .

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FDMS86150ET100 Features

FDMS86150ET100 General Description

Datasheet Details

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