FDMS86152 datasheet, mosfet equivalent, Fairchild Semiconductor

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Features and benefits

General Description
* Max rDS(on) = 6 mΩ at VGS = 10 V, ID = 14 A
* Max rDS(on) = 11 mΩ at VGS = 6 V, ID = 11.5 A
* Advanced Package and Silicon combination.

Application

* Primary DC-DC MOSFET
* Secondary Synchronous Rectifier
* Load Switch Top Pin 1 Bottom Pin 1 SSSG S .

Description

* Max rDS(on) = 6 mΩ at VGS = 10 V, ID = 14 A
* Max rDS(on) = 11 mΩ at VGS = 6 V, ID = 11.5 A
* Advanced Package and Silicon combination for low rDS(on) and high efficiency This N-Channel MOSFET is produced using Fairchild Semiconductor.

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