FDMS86181 mosfet equivalent, n-channel shielded gate powertrench mosfet.
* Shielded Gate MOSFET Technology
* Max rDS(on) = 4.2 mΩ at VGS = 10 V, ID = 44 A
* Max rDS(on) = 12 mΩ at VGS = 6 V, ID = 22 A
* ADD
* 50% lower Qrr .
* Primary DC-DC MOSFET
* Synchronous Rectifier in DC-DC and AC-DC
* Motor Drive
* Solar
Top Pin 1
Bott.
This N-Channel MV MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized to minimise on-state resistance and yet maintain superior switching perform.
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