FDMS86181 - N-Channel Shielded Gate PowerTrench MOSFET

Fairchild Semiconductor

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Datasheet Details

Part number	FDMS86181
Manufacturer	Fairchild Semiconductor
File Size	359.73 KB
Description	N-Channel Shielded Gate PowerTrench MOSFET
Datasheet	FDMS86181-FairchildSemiconductor.pdf

FDMS86181 Product details

Description

This N-Channel MV MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that incorporates Shielded Gate technology. Primary DC-DC MOSFET Synchronous Rectifier in DC-DC and AC-DC Motor Drive Solar Top Pin 1 Bottom Pin 1 S S S G Power 56 D D D D S S S G D D D D MOS

Features

Shielded Gate MOSFET Technology.
Max rDS(on) = 4.2 mΩ at VGS = 10 V, ID = 44 A.
Max rDS(on) = 12 mΩ at VGS = 6 V, ID = 22 A.
ADD.
50% lower Qrr than other MOSFET suppliers.
Lowers switching noise/EMI.
MSL1 robust package design.
100% UIL tested.
RoHS Compliant General.

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Published: May 19, 2016 |