FDMS86202ET120
Overview
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized for the on-state resistance and yet maintain superior switching performance.
- Extended TJ rating to 175°C
- Shielded Gate MOSFET Technology
- Max rDS(on) = 7.2 mΩ at VGS = 10 V, ID = 13.5 A
- Max rDS(on) = 10.3 mΩ at VGS = 6 V, ID = 11.5 A
- Advanced Package and Silicon combination for low rDS(on) and high efficiency
- MSL1 robust package design
- 100% UIL tested
- RoHS Compliant
