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FDMS86202ET120 - MOSFET

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General Description

This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that incorporates Shielded Gate technology.

This process has been optimized for the on-state resistance and yet maintain superior switching performance.

Application „ DC-DC Conversion Top Pin 1 Bottom S Pin 1 S S G D D D D Power 56 MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Dr

Overview

FDMS86202ET120 N-Channel Shielded Gate PowerTrench® MOSFET January 2015 FDMS86202ET120 N-Channel Shielded Gate PowerTrench® MOSFET 120 V, 102 A, 7.

Key Features

  • Extended TJ rating to 175°C.
  • Shielded Gate MOSFET Technology.
  • Max rDS(on) = 7.2 mΩ at VGS = 10 V, ID = 13.5 A.
  • Max rDS(on) = 10.3 mΩ at VGS = 6 V, ID = 11.5 A.
  • Advanced Package and Silicon combination for low rDS(on) and high efficiency.
  • MSL1 robust package design.
  • 100% UIL tested.
  • RoHS Compliant General.

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