FDMS86300 mosfet equivalent, n-channel mosfet.
* Max rDS(on) = 3.9 mΩ at VGS = 10 V, ID = 19 A
* Max rDS(on) = 5.5 mΩ at VGS = 8 V, ID = 15.5 A
* Advanced Package and Silicon combination for low rDS(on)
an.
* OringFET / Load Switching
* DC-DC Conversion
Top
Bottom
Pin 1
S S S G
D5 D6
4G 3S
Power 56
D D D D
MO.
This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers.It has been optimized for low gate charg.
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