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FDMS86300 Datasheet N-Channel MOSFET

Manufacturer: Fairchild (now onsemi)

Overview: FDMS86300 N-Channel PowerTrench® MOSFET FDMS86300 N-Channel PowerTrench® MOSFET 80 V, 122 A, 3.

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General Description

This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers.It has been optimized for low gate charge, low rDS(on), fast switching speed and body diode reverse recovery performance.

Applications „ OringFET / Load Switching „ DC-DC Conversion Top Bottom Pin 1 S S S G D5 D6 4G 3S Power 56 D D D D MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Continuous -Continuous -Pulsed TC = 25 °C TC = 100 °C TA = 25 °C Single Pulse Avalanche Energy Power Dissipation TC = 25 °C Power Dissipation TA = 25 °C Operating and Storage Junction Temperature Range Thermal Characteristics D7 D8 (Note 1a) (Note 4) (Note 3) (Note 1a) 2S 1S Ratings 80 ±20 122 78 19 556 252 104 2.5 -55 to +150 Units V V A mJ W °C RθJC RθJA Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Package Marking and Ordering Information 1.2 (Note 1a) 50 °C/W Device Marking FDMS86300 Device FDMS86300 Package Power 56 Reel Size 13 ’’ Tape Width 12 mm Quantity 3000 units ©2012 Fairchild Semiconductor Corporation 1 FDMS86300 Rev.1.4 www.fairchildsemi.com FDMS86300 N-Channel PowerTrench® MOSFET Electrical Characteristics TJ = 25 °C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristic

Key Features

  • Max rDS(on) = 3.9 mΩ at VGS = 10 V, ID = 19 A.
  • Max rDS(on) = 5.5 mΩ at VGS = 8 V, ID = 15.5 A.
  • Advanced Package and Silicon combination for low rDS(on) and high efficiency.
  • Next generation enhanced body diode technology, engineered for soft recovery.
  • MSL1 robust package design.
  • 100% UIL tested.
  • RoHS Compliant December 2015 General.

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