FDMS86368_F085 Datasheet | Fairchild Semiconductor

Features - Typical RDS(on) = 3.7 mΩ at VGS = 10V, ID = 80 A - Typical Qg(tot) = 57 n C at VGS = 10V, ID = 80 A - UIS Capability - Ro HS pliant - Qualified to AEC Q101 Applications - Automotive Engine Control - Power Train Management - Solenoid and Motor Drivers - Integrated Starter/Alternator - Primary Switch for 12V Systems For current package drawing, please refer to the Fairchild web‐ site  at  https://.fairchildsemi./package‐drawings/PQ/ PQFN08M.pdf MOSFET Maximum Ratings TJ = 25°C unless otherwise noted. Symbol Parameter VDSS VGS Drain-to-Source Voltage Gate-to-Source Voltage Drain Current - Continuous (VGS=10) (Note 1) Pulsed Drain Current EAS Single Pulse Avalanche Energy Power Dissipation Derate Above 25o C TJ, TSTG RθJC RθJA Operating and Storage Temperature Thermal Resistance, Junction to Case Maximum Thermal Resistance, Junction to Ambient TC = 25°C TC = 25°C (Note 2) (Note 3) Ratings 80 ±20 80 See Figure 4 82 214 1.43 -55 to + 175 0.7 50 Units V V A m J W W/o C o C o C/W o C/W Notes: 1: Current is limited by bondwire configuration. 2: Starting TJ = 25°C, L = 40u H, IAS = 64A, VDD = 80V during inductor charging and VDD = 0V during time in avalanche. 3: RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance, where the case thermal reference is defined as the solder mounting surface presented here is of the based drain pins. RθJC is on mounting on a 1 guaranteed by design, in2 pad of 2oz copper. while RθJAis determined by the board...