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FDMS86368_F085 - N-Channel PowerTrench MOSFET

Download the FDMS86368_F085 datasheet PDF. This datasheet also covers the FDMS86368 variant, as both devices belong to the same n-channel powertrench mosfet family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • Typical RDS(on) = 3.7 mΩ at VGS = 10V, ID = 80 A.
  • Typical Qg(tot) = 57 nC at VGS = 10V, ID = 80 A.
  • UIS Capability.
  • RoHS Compliant.
  • Qualified to AEC Q101.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (FDMS86368-FairchildSemiconductor.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
FDMS86368_F085 N-Channel PowerTrench® MOSFET FDMS86368_F085 N-Channel PowerTrench® MOSFET 80 V, 80 A, 4.5 mΩ December 2014 Features „ Typical RDS(on) = 3.7 mΩ at VGS = 10V, ID = 80 A „ Typical Qg(tot) = 57 nC at VGS = 10V, ID = 80 A „ UIS Capability „ RoHS Compliant „ Qualified to AEC Q101 Applications „ Automotive Engine Control „ PowerTrain Management „ Solenoid and Motor Drivers „ Integrated Starter/Alternator „ Primary Switch for 12V Systems For current package drawing, please refer to the Fairchild web‐ site  at  https://www.fairchildsemi.com/package‐drawings/PQ/ PQFN08M.pdf MOSFET Maximum Ratings TJ = 25°C unless otherwise noted.