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Fairchild Semiconductor Electronic Components Datasheet

FDMS86369_F085 Datasheet

MOSFET

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FDMS86369_F085
N-Channel PowerTrench® MOSFET
80 V, 65 A, 7.5 mΩ
March 2015
Features
„ Typical RDS(on) = 5.9 mΩ at VGS = 10V, ID = 65 A
„ Typical Qg(tot) = 35 nC at VGS = 10V, ID = 65 A
„ UIS Capability
„ RoHS Compliant
„ Qualified to AEC Q101
Applications
„ Automotive Engine Control
„ PowerTrain Management
„ Solenoid and Motor Drivers
„ Integrated Starter/Alternator
„ Primary Switch for 12V Systems
For current package drawing, please refer to the Fairchild web
site  at  https://www.fairchildsemi.com/packagedrawings/PQ/
PQFN08M.pdf
MOSFET Maximum Ratings TJ = 25°C unless otherwise noted.
Symbol
Parameter
VDSS
VGS
ID
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current - Continuous (VGS=10) (Note 1)
Pulsed Drain Current
EAS Single Pulse Avalanche Energy
PD
Power Dissipation
Derate Above 25oC
TJ, TSTG
RθJC
RθJA
Operating and Storage Temperature
Thermal Resistance, Junction to Case
Maximum Thermal Resistance, Junction to Ambient
TC = 25°C
TC = 25°C
(Note 2)
(Note 3)
Ratings
80
±20
65
See Figure 4
27
107
0.71
-55 to +175
1.4
50
Units
V
V
A
mJ
W
W/oC
oC
oC/W
oC/W
Notes:
1: Current is limited by bondwire configuration.
2: Starting TJ = 25°C, L = 20uH, IAS = 52A, VDD = 80V during inductor charging and VDD = 0V during time in avalanche.
3: RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance, where the case thermal reference is defined as the solder
mounting surface
presented here is
of the
based
drain pins. RθJC is
on mounting on a 1
guaranteed by design,
in2 pad of 2oz copper.
while
RθJAis
determined
by
the
board
design.
The maximum rating
Package Marking and Ordering Information
Device Marking
FDMS86369
Device
FDMS86369_F085
Package
Power56
Reel Size
13”
Tape Width
12mm
Quantity
3000units
©2015 Fairchild Semiconductor Corporation
FDMS86369_F085 Rev. C1
1
www.fairchildsemi.com


Fairchild Semiconductor Electronic Components Datasheet

FDMS86369_F085 Datasheet

MOSFET

No Preview Available !

Electrical Characteristics TJ = 25°C unless otherwise noted.
Symbol
Parameter
Off Characteristics
Test Conditions
Min. Typ. Max. Units
BVDSS Drain-to-Source Breakdown Voltage
IDSS Drain-to-Source Leakage Current
IGSS
Gate-to-Source Leakage Current
On Characteristics
ID = 250μA, VGS = 0V
VDS = 80V TJ = 25oC
VGS = 0V TJ = 175oC (Note 4)
VGS = ±20V
80
-
-
-
- -V
- 1 μA
- 1 mA
- ±100 nA
VGS(th)
RDS(on)
Gate to Source Threshold Voltage
Drain to Source On Resistance
Dynamic Characteristics
VGS = VDS, ID = 250μA
ID = 65A, TJ = 25oC
VGS= 10V TJ = 175oC (Note 4)
2
-
-
34V
5.9 7.5 mΩ
12.2 15.5 mΩ
Ciss
Coss
Crss
Rg
Qg(ToT)
Qg(th)
Qgs
Qgd
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
Threshold Gate Charge
Gate-to-Source Gate Charge
Gate-to-Drain “Miller“ Charge
Switching Characteristics
VDS = 40V, VGS = 0V,
f = 1MHz
f = 1MHz
VGS = 0 to 10V
VGS = 0 to 2V
VDD = 64V
ID = 65A
- 2470
-
- 400
-
- 14
-
- 1.8
-
- 35 46
- 4.5 -
- 12.5 -
-8 -
pF
pF
pF
Ω
nC
nC
nC
nC
ton
td(on)
tr
td(off)
tf
toff
Turn-On Time
Turn-On Delay
Rise Time
Turn-Off Delay
Fall Time
Turn-Off Time
Drain-Source Diode Characteristics
VDD = 40V, ID = 65A,
VGS = 10V, RGEN = 6Ω
- - 39 ns
- 15 - ns
- 11 - ns
- 24 - ns
- 8 - ns
- - 48 ns
VSD Source-to-Drain Diode Voltage
trr Reverse-Recovery Time
Qrr Reverse-Recovery Charge
ISD =65A, VGS = 0V
ISD = 32.5A, VGS = 0V
IF = 65A, dISD/dt = 100A/μs
VDD = 64V
- - 1.4 V
- - 1.2 V
- 49 74 ns
- 44 68 nC
Note:
4: The maximum value is specified by design at TJ = 175°C. Product is not tested to this condition in production.
©2015 Fairchild Semiconductor Corporation
FDMS86369_F085 Rev. C1
2
www.fairchildsemi.com


Part Number FDMS86369_F085
Description MOSFET
Maker Fairchild Semiconductor
Total Page 6 Pages
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