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FDMS8820 Datasheet N-Channel PowerTrench MOSFET

Manufacturer: Fairchild (now onsemi)

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General Description

This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers.It has been optimized for low gate charge, low rDS(on), fast switching speed and body diode reverse recovery performance.

Applications „ VRM Vcore Switching For Desktop And Server „ OringFET / Load Switching „ DC-DC Conversion Pin 1 Top Bottom Pin 1 S S S G Power 56 D D DD S S S G D D D D MOSFET Maximum Ratings TA = 25 °C unless otherwise noted.

Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Continuous -Continuous -Pulsed TC = 25 °C TC = 100 °C TA = 25 °C Single Pulse Avalanche Energy Power Dissipation TC = 25 °C Power Dissipation TA = 25 °C Operating and Storage Junction Temperature Range Thermal Characteristics (Note 4) (Note 6) (Note 6) (Note 1a) (Note 5) (Note 3) (Note 1a) Ratings 30 ±20 160 101 28 634 294 78 2.5 -55 to +150 Units V V A mJ W °C RθJC RθJA Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Package Marking and Ordering Information (Note 1a) 1.6 50 °C/W Device Marking FDMS8820 Device FDMS8820 Package Power 56 Reel Size 13 ’’ Tape Width 12 mm Quantity 3000 units ©2012 Fairchild Semiconductor Corporation FDMS8820 Rev.

Overview

FDMS8820 N-Channel PowerTrench® MOSFET FDMS8820 N-Channel PowerTrench® MOSFET 30 V, 160 A, 2.

Key Features

  • Max rDS(on) = 2.0 mΩ at VGS = 10 V, ID = 28 A.
  • Max rDS(on) = 2.4 mΩ at VGS = 4.5 V, ID = 25 A.
  • Advanced Package and Silicon combination for low rDS(on) and high efficiency.
  • Next generation enhanced body diode technology, engineered for soft recovery.
  • MSL1 robust package design.
  • 100% UIL tested.
  • RoHS Compliant May 2015 General.

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