General Description
* Max rDS(on) = 9.0 mΩ at VGS = 10 V, ID = 13 A
* Max rDS(on) = 11.5 mΩ at VGS = 6 V, ID = 11 A
* Advanced Package and Silicon combinati.

* MSL1 robust package design
* OringFET / Load Switching
* 100% UIL tested
* Synchronous Rectificati.

* Max rDS(on) = 9.0 mΩ at VGS = 10 V, ID = 13 A
* Max rDS(on) = 11.5 mΩ at VGS = 6 V, ID = 11 A
* Advanced Package and Silicon combination for low rDS(on) and high efficiency
* Next generation enhanced body diode technology, engineer.

FDMT800150DC

FDMT800100DC

FDMT800120DC

FDMT80060DC

FDMT80080DC

FDM-2B

FDM100-0045SP

FDM21-05QC

FDM2452NZ

FDM3300NZ

FDM3622

FDM606P

FDM6296