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FDP039N08B - N-Channel PowerTrench MOSFET

General Description

This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.

Synchronous Rectification for ATX / Server / Telecom PSU Batte

Key Features

  • RDS(on) = 3.16 mΩ (Typ. ) @ VGS = 10 V, ID = 100 A.
  • Low FOM RDS(on).
  • QG.
  • Low Reverse-Recovery Charge, Qrr = 87.9 nC.
  • Soft Reverse-Recovery Body Diode.
  • Enables High Efficiency in Synchronous Rectification.
  • Fast Switching Speed.
  • 100% UIL Tested.
  • RoHS Compliant.

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Full PDF Text Transcription (Reference)

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FDP039N08B — N-Channel PowerTrench® MOSFET FDP039N08B N-Channel PowerTrench® MOSFET 80 V, 171 A, 3.9 mΩ November 2013 Features • RDS(on) = 3.16 mΩ (Typ.) @ VGS = 10 V, ID = 100 A • Low FOM RDS(on) * QG • Low Reverse-Recovery Charge, Qrr = 87.9 nC • Soft Reverse-Recovery Body Diode • Enables High Efficiency in Synchronous Rectification • Fast Switching Speed • 100% UIL Tested • RoHS Compliant Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.