FDP120N10 Key Features
- RDS(on) = 9.7 mΩ (Typ.) @ VGS = 10 V, ID = 74 A
- Fast Switching Speed
- Low Gate Charge
- High Performance Trench Technology for Extremely Low
- High Power and Current Handling Capability
- RoHS pliant
- Part: FDP120N10
- Description: MOSFET
- Manufacturer: Fairchild Semiconductor
- Size: 607.42 KB
Other FDP120N10 Datasheets
| Manufacturer | Part Number | Description |
|---|---|---|
Inchange Semiconductor |
FDP120N10 | N-Channel MOSFET |