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FDP12N50 Datasheet N-Channel MOSFET

Manufacturer: Fairchild (now onsemi)

Download the FDP12N50 datasheet PDF. This datasheet also includes the FDPF12N50 variant, as both parts are published together in a single manufacturer document.

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Note: The manufacturer provides a single datasheet file (FDPF12N50_FairchildSemiconductor.pdf) that lists specifications for multiple related part numbers.

General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

These devices are well suited for high efficient switched mode power supplies and active power factor correction.

Overview

FDP12N50 / FDPF12N50 N-Channel MOSFET June 2007 FDP12N50 / FDPF12N50 N-Channel MOSFET 500V, 11.5A, 0.

Key Features

  • RDS(on) = 0.55Ω (Typ. )@ VGS = 10V, ID = 6A.
  • Low gate charge ( Typ. 22nC).
  • Low Crss ( Typ. 11pF).
  • Fast switching.
  • 100% avalanche tested.
  • Improved dv/dt capability.
  • RoHS compliant UniFETTM tm.

📁 Similar Datasheet

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