FDP150N10 Key Features
- RDS(on) = 12 mΩ ( Typ.) @ VGS = 10 V, ID = 49 A
- Fast Switching Speed
- Low Gate Charge
- High Performance Trench Technology for Extremely Low RDS(on)
- High Power and Current Handling Capability
- RoHS pliant
| Manufacturer | Part Number | Description |
|---|---|---|
Inchange Semiconductor |
FDP150N10 | N-Channel MOSFET |