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FDP150N10A — N-Channel PowerTrench® MOSFET
FDP150N10A
N-Channel PowerTrench® MOSFET
100 V, 50 A, 15 mΩ
November 2013
Features
• RDS(on) = 12.5 mΩ (Typ.) @ VGS = 10 V, ID = 50 A • Fast Switching Speed • Low Gate Charge, QG = 16.2 nC (Typ.) • High Performance Trench Technology for Extremely Low
RDS(on) • High Power and Current Handling Capability • RoHS Compliant
Description
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.