FDP150N10A Datasheet, Fairchild Semiconductor

* RDS(on) = 12.5 mΩ (Typ.) @ VGS = 10 V, ID = 50 A
* Fast Switching Speed
* Low Gate Charge, QG = 16.2 nC (Typ.)
* High Performance Trench Technology for .

* Synchronous Rectification for ATX / Server / Telecom PSU
* Motor Drives and Uninterruptible Power Supplies

This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance. Applications
* Synchronous Rectification .