FDP22N50N Key Features
- RDS(on) = 185 mΩ (Typ.) @ VGS = 10 V, ID = 11 A
- Low Gate Charge (Typ. 49 nC)
- Low Crss (Typ. 24 pF)
- 100% Avalanche Tested
- Improve dv/dt Capability
- RoHS pliant
- Part: FDP22N50N
- Description: MOSFET
- Manufacturer: Fairchild Semiconductor
- Size: 779.32 KB
Other FDP22N50N Datasheets
| Manufacturer | Part Number | Description |
|---|---|---|
onsemi |
FDP22N50N | N-Channel MOSFET |