FDP2710 Datasheet, Fairchild Semiconductor

* RDS(on) = 36.3 mΩ ( Typ.)@ VGS = 10 V, ID = 25 A
* Fast Switching Speed
* Low Gate Charge
* High Performance Trench technology for Extremely Low RDS(on).

* Consumer Appliances
* Synchronous Rectification D GDS TO-220 Absolute Maximum Ratings TC = 25°C unless oth.

This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance. Applications
* Consumer Appliances
* .