FDP2710
Description
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.
Key Features
- RDS(on) = 36.3 mΩ ( Typ.)@ VGS = 10 V, ID = 25 A
- Fast Switching Speed
- Low Gate Charge
- High Performance Trench technology for Extremely Low RDS(on)
- High Power and Current Handing Capability
- RoHS Compliant
