Datasheet4U Logo Datasheet4U.com

FDP2710 - 250V N-Channel MOSFET

Description

This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.

Consumer Appliances Synchronous Rectification D GDS TO-220

Features

  • RDS(on) = 36.3 mΩ ( Typ. )@ VGS = 10 V, ID = 25 A.
  • Fast Switching Speed.
  • Low Gate Charge.
  • High Performance Trench technology for Extremely Low RDS(on).
  • High Power and Current Handing Capability.
  • RoHS Compliant General.

📥 Download Datasheet

Datasheet preview – FDP2710

📁 Similar Datasheet

  • FDP2710 - N-Channel MOSFET (INCHANGE)
  • FDP2710-F085 - N-Channel MOSFET (ON Semiconductor)
  • FDP20N50 - N-Channel MOSFET (ON Semiconductor)
  • FDP20N50 - N-Channel MOSFET (INCHANGE)
  • FDP20N50F - N-Channel MOSFET (ON Semiconductor)
  • FDP22N50N - N-Channel MOSFET (ON Semiconductor)
  • FDP2532 - N-Channel MOSFET (ON Semiconductor)
  • FDP2532 - N-Channel MOSFET (INCHANGE)
  • FDP2552 - 150V 37A N-Channel MOSFET (ON Semiconductor)
  • FDP2572 - N-Channel MOSFET (INCHANGE)
Other Datasheets by Fairchild Semiconductor

Full PDF Text Transcription

Click to expand full text
FDP2710 — N-Channel PowerTrench® MOSFET October 2013 FDP2710 N-Channel PowerTrench® MOSFET 250 V, 50 A, 42.5 mΩ Features • RDS(on) = 36.3 mΩ ( Typ.)@ VGS = 10 V, ID = 25 A • Fast Switching Speed • Low Gate Charge • High Performance Trench technology for Extremely Low RDS(on) • High Power and Current Handing Capability • RoHS Compliant General Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.
Published: |