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FDP3651U - N-Channel MOSFET

Features

  • RDS(on) = 15 mΩ ( Typ. ) @ VGS = 10 V, ID = 80 A.
  • High Performance Trench Technology for Extremely Low RDS(on).
  • Low Miller Charge.
  • UIS Capability (Single Pulse and Repetitive Pulse).

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Datasheet preview – FDP3651U

Datasheet Details

Part number FDP3651U
Manufacturer Fairchild Semiconductor
File Size 665.32 KB
Description N-Channel MOSFET
Datasheet download datasheet FDP3651U Datasheet
Additional preview pages of the FDP3651U datasheet.

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Full PDF Text Transcription

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FDP3651U — N-Channel PowerTrench® MOSFET October 2013 FDP3651U N-Channel PowerTrench® MOSFET 100 V, 80 A, 18 mΩ Features • RDS(on) = 15 mΩ ( Typ.
Published: |