FDP39N20 Datasheet | Fairchild Semiconductor

tures - RDS(on) = 66 mΩ (Max.) @ VGS = 10 V, ID = 19.5 A - Low Gate Charge (Typ. 38 n C) - Low Crss (Typ. 57 p F) - 100% Avalanche Tested Applications - PDP TV - Lighting - Uninterruptible Power Supply - AC-DC Power Supply August 2014 Description Uni FETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts. TO-220 GDS TO-220F TO-220F (L-formed) Absolute Maximum Ratings TC = 25°C unless otherwise noted. Symbol Parameter FDPF39N20 / FDPF39N20TLDTU VDSS ID IDM VGSS EAS IAR EAR dv/dt Drain-Source Voltage Drain Current Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) - Pulsed Gate-Source voltage Single Pulsed Avalanche...