Datasheet4U Logo Datasheet4U.com

FDP5500_F085 - N-Channel UltraFET Power MOSFET

Key Features

  • Typ rDS(on) = 5.1mΩ at VGS = 10V, ID = 80A.
  • Typ Qg(10) = 114nC at VGS = 10V.
  • Simulation Models -Temperature Compensated PSPICE and.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
FDP5500-F085 N-Channel UltraFET Power MOSFET ON Semiconductor
FDP51N25 N-Channel MOSFET ON Semiconductor
FDP52N20 N-Channel MOSFET ON Semiconductor
FDP027N08B N-Channel MOSFET ON Semiconductor
FDP030N06 N-Channel MOSFET INCHANGE

Other Datasheets by Fairchild (now onsemi)

Part Number Description
FDP55N06 N-Channel MOSFET
FDP51N25 N-Channel UniFET MOSFET
FDP52N20 N-Channel MOSFET
FDP5645 60V N-Channel MOSFET
FDP5680 60V N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
FDP5500_F085 N-Channel UltraFET Power MOSFET FDP5500_F085 N-Channel UltraFET Power MOSFET 55V, 80A, 7mΩ Features „ Typ rDS(on) = 5.1mΩ at VGS = 10V, ID = 80A „ Typ Qg(10) = 114nC at VGS = 10V „ Simulation Models -Temperature Compensated PSPICE and SABERTM Models „ Peak Current vs Pulse Width Curve „ UIS Rating Curve „ Qualified to AEC Q101 „ RoHS Compliant Applications „ DC Linear Mode Control „ Solenoid and Motor Control „ Switching Regulators „ Automotive Systems April 2009 Package DRAIN (FLANGE) TO-220AB SOURCE DRAIN GATE ©2009 Fairchild Semiconductor Corporation FDP5500_F085 Rev. A 1 Symbol D G S www.fairchildsemi.