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* 55A, 60V, RDS(on) = 0.022 Ω @VGS = 10 V Low gate charge ( typical 30 nC) Low Crss ( typical 60 pF) Fast switching 100% avalanche teste.

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switch.

FDP5500-F085

FDP5500_F085

FDP51N25

FDP52N20

FDP5645

FDP5680

FDP5690

FDP5800

FDP5N50

FDP5N50F

FDP5N50NZ

FDP5N50U

FDP5N60NZ