FDP55N06 Datasheet | Fairchild Semiconductor

.. FDP55N06/FDPF55N06 60V N-Channel MOSFET UniFET FDP55N06/FDPF55N06 60V N-Channel MOSFET Features - - - - - - 55A, 60V, RDS(on) = 0.022 Ω @VGS = 10 V Low gate charge ( typical 30 nC) Low Crss ( typical 60 pF) Fast switching 100% avalanche tested Improved dv/dt capability Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficient...