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FDP55N06 - N-Channel MOSFET

Download the FDP55N06 datasheet PDF. This datasheet also covers the FDPF55N06 variant, as both devices belong to the same n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

Features

  • 55A, 60V, RDS(on) = 0.022 Ω @VGS = 10 V Low gate charge ( typical 30 nC) Low Crss ( typical 60 pF) Fast switching 100% avalanche tested Improved dv/dt capability TM.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (FDPF55N06_FairchildSemiconductor.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

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Other Datasheets by Fairchild (onsemi)

Part Number Description
FDP5500_F085 N-Channel UltraFET Power MOSFET
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Full PDF Text Transcription

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www.DataSheet4U.com FDP55N06/FDPF55N06 60V N-Channel MOSFET UniFET FDP55N06/FDPF55N06 60V N-Channel MOSFET Features • • • • • • 55A, 60V, RDS(on) = 0.022 Ω @VGS = 10 V Low gate charge ( typical 30 nC) Low Crss ( typical 60 pF) Fast switching 100% avalanche tested Improved dv/dt capability TM Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
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