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Fairchild Semiconductor Electronic Components Datasheet

FDP5N50F Datasheet

N-Channel MOSFET

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FDP5N50F / FDPF5N50FT
N-Channel MOSFET, FRFET
500V, 4.5A, 1.55
Features
• RDS(on) = 1.25( Typ.)@ VGS = 10V, ID = 2.25A
• Low gate charge ( Typ. 11nC)
• Low Crss ( Typ. 5pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• RoHS compliant
December 2007
UniFETTM
tm
Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pluse in the avalanche
and commutation mode. These devices are well suited for high
efficient switched mode power suppliesand active power factor-
correction.
D
G
GDS
TO-220
FDP Series
GD S
TO-220F
FDPF Series
S
MOSFET Maximum Ratings TC = 25oC unless otherwise noted*
Symbol
VDSS
VGSS
ID
IDM
EAS
IAR
EAR
dv/dt
PD
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
-Continuous (TC = 25oC)
-Continuous (TC = 100oC)
- Pulsed
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
(TC = 25oC)
- Derate above 25oC
TJ, TSTG
Operating and Storage Temperature Range
TL
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
*Drain current limited by maximum junction temperature
Thermal Characteristics
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
FDP5N50F FDPF5N50FT
500
±30
4.5 4.5*
2.7 2.7*
18 18*
233
4.5
8.5
4.5
85 28
0.67 0.22
-55 to +150
300
Symbol
RθJC
RθCS
RθJA
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Case to Sink Typ.
Thermal Resistance, Junction to Ambient
FDP5N50F
1.4
0.5
62.5
FDPF5N50FT
4.5
-
62.5
Units
V
V
A
A
mJ
A
mJ
V/ns
W
W/oC
oC
oC
Units
oC/W
©2007 Fairchild Semiconductor Corporation
FDP5N50F / FDPF5N50FT Rev. A1
1
www.fairchildsemi.com
http://www.Datasheet4U.com


Fairchild Semiconductor Electronic Components Datasheet

FDP5N50F Datasheet

N-Channel MOSFET

No Preview Available !

Package Marking and Ordering Information TC = 25oC unless otherwise noted
Device Marking
FDP5N50F
Device
FDP5N50F
Package
TO-220
Reel Size
-
Tape Width
-
FDPF5N50FT
FDPF5N50FT
TO-220F
-
-
Quantity
50
50
Electrical Characteristics
Symbol
Parameter
Test Conditions
Min.
Off Characteristics
BVDSS
BVDSS
TJ
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
IDSS Zero Gate Voltage Drain Current
IGSS
Gate to Body Leakage Current
ID = 250µA, VGS = 0V, TJ = 25oC
ID = 250µA, Referenced to 25oC
VDS = 500V, VGS = 0V
VDS = 400V, TC = 125oC
VGS = ±30V, VDS = 0V
500
-
-
-
-
On Characteristics
VGS(th)
RDS(on)
gFS
Gate Threshold Voltage
Static Drain to Source On Resistance
Forward Transconductance
VGS = VDS, ID = 250µA
VGS = 10V, ID = 2.25A
VDS = 20V, ID = 2.25A
(Note 4)
3.0
-
-
Dynamic Characteristics
Ciss
Coss
Crss
Qg(tot)
Qgs
Qgd
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
VDS = 25V, VGS = 0V
f = 1MHz
VDS = 400V, ID = 5A
VGS = 10V
(Note 4, 5)
-
-
-
-
-
-
Switching Characteristics
td(on)
tr
td(off)
tf
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
VDD = 250V, ID = 5A
RG = 25
(Note 4, 5)
-
-
-
-
Drain-Source Diode Characteristics
IS Maximum Continuous Drain to Source Diode Forward Current
ISM Maximum Pulsed Drain to Source Diode Forward Current
VSD
Drain to Source Diode Forward Voltage
VGS = 0V, ISD = 4.5A
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
VGS = 0V, ISD = 5A
dIF/dt = 100A/µs
Notes:
1: Repetitive Rating: Pulse width limited by maximum junction temperature
2: L =23 mH, IAS = 4.5A, VDD = 50V, RG = 25, Starting TJ = 25°C
3: ISD 4.5A, di/dt 200A/µs, VDD BVDSS, Starting TJ = 25°C
4: Pulse Test: Pulse width 300µs, Duty Cycle 2%
5: Essentially Independent of Operating Temperature Typical Characteristics
(Note 4)
-
-
-
-
-
Typ.
-
0.6
-
-
-
-
1.25
4.3
490
66
5
11
3
5
13
22
28
20
-
-
-
65
0.120
Max. Units
-
-
10
100
±100
V
V/oC
µA
nA
5.0 V
1.55
-S
650 pF
88 pF
7.5 pF
15 nC
- nC
- nC
36 ns
54 ns
66 ns
50 ns
4.5 A
18 A
1.5 V
- ns
- µC
FDP5N50F / FDPF5N50FT Rev. A1
2
www.fairchildsemi.com
http://www.Datasheet4U.com


Part Number FDP5N50F
Description N-Channel MOSFET
Maker Fairchild Semiconductor
Total Page 10 Pages
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