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FDP5N50U - N-Channel MOSFET

Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DOMS technology.

Features

  • RDS(on) = 1.65 ( Typ. )@ VGS = 10V, ID = 2A.
  • Low gate charge ( Typ. 11nC).
  • Low Crss ( Typ. 5pF).
  • Fast switching.
  • 100% avalanche tested.
  • Improved dv/dt capability.
  • RoHS compliant Ultra FRFET tm TM.

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Datasheet Details

Part number FDP5N50U
Manufacturer Fairchild Semiconductor
File Size 203.26 KB
Description N-Channel MOSFET
Datasheet download datasheet FDP5N50U Datasheet
Additional preview pages of the FDP5N50U datasheet.

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Full PDF Text Transcription

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FDP5N50U / FDPF5N50UT N-Channel MOSFET, FRFET November2009 FDP5N50U / FDPF5N50UT N-Channel MOSFET, FRFET 500V, 4A, 2.0 Features • RDS(on) = 1.65 ( Typ.)@ VGS = 10V, ID = 2A • Low gate charge ( Typ. 11nC) • Low Crss ( Typ. 5pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability • RoHS compliant Ultra FRFET tm TM Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DOMS technology. This advance technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutationmode. These devices are well suited for high efficient switched mode power supplies and active power factor correction.
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