FDP65N06 mosfet equivalent, n-channel mosfet.
* RDS(on) = 13 mΩ (Typ.) @ VGS = 10 V, ID = 32.5 A
* Low Gate Charge ( typical 33 nC)
* Low Crss ( typical 35 pF)
* Fast Switching
* Improved dv/dt Ca.
such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
D
GDS
TO-2.
UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strengt.
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