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FDP65N06 - N-Channel MOSFET

General Description

UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology.

This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength.

Key Features

  • RDS(on) = 13 mΩ (Typ. ) @ VGS = 10 V, ID = 32.5 A.
  • Low Gate Charge ( typical 33 nC).
  • Low Crss ( typical 35 pF).
  • Fast Switching.
  • Improved dv/dt Capability November 2013.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FDP65N06 — N-Channel UniFETTM MOSFET FDP65N06 N-Channel UniFETTM MOSFET 60 V, 65 A, 16 mΩ Features • RDS(on) = 13 mΩ (Typ.) @ VGS = 10 V, ID = 32.5 A • Low Gate Charge ( typical 33 nC) • Low Crss ( typical 35 pF) • Fast Switching • Improved dv/dt Capability November 2013 Description UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts. D GDS TO-220 G Absolute Maximum Ratings TC = 25°C unless otherwise noted.