FDP7N50 Key Features
- 7A, 500V, RDS(on) = 0.9Ω @VGS = 10 V
- Low gate charge ( typical 12.8 nC)
- Low Crss ( typical 9 pF)
- Fast switching
- 100% avalanche tested
- Improved dv/dt capability
- Part: FDP7N50
- Manufacturer: Fairchild (official site)
- Size: 318.50 KB
Related Fairchild Datasheets
| Part Number | Description |
|---|---|
| FDP7N50F | N-Channel MOSFET |
| FDP7N50U | N-Channel MOSFET |
| FDP7N60NZ | N-Channel MOSFET |
| FDP7030BL | N-Channel MOSFET |
| FDP7030L | N-Channel MOSFET |
FDP7N50 Description
TM These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficient switched mode power supplies and...