Datasheet4U Logo Datasheet4U.com

FDPC5018SG - MOSFET

Description

Q1: N-Channel Max rDS(on) = 5.0 mΩ at VGS = 10 V, ID = 17 A Max rDS(on) = 6.5 mΩ at VGS = 4.5 V, ID = 14 A Q2: N-Channel Max rDS(on) = 1.6 mΩ at VGS = 10 V, ID = 32 A Max rDS(on) = 2.0 mΩ at VGS = 4.5 V, ID = 28 A Low Inductance Packaging Shortens R

Features

  • General.

📥 Download Datasheet

Datasheet preview – FDPC5018SG

Datasheet Details

Part number FDPC5018SG
Manufacturer Fairchild Semiconductor
File Size 331.34 KB
Description MOSFET
Datasheet download datasheet FDPC5018SG Datasheet
Additional preview pages of the FDPC5018SG datasheet.

📁 Similar Datasheet

Other Datasheets by Fairchild Semiconductor

Full PDF Text Transcription

Click to expand full text
FDPC5018SG PowerTrench® Power Clip FDPC5018SG PowerTrench® Power Clip 30V Asymmetric Dual N-Channel MOSFET September 2015 Features General Description Q1: N-Channel „ Max rDS(on) = 5.0 mΩ at VGS = 10 V, ID = 17 A „ Max rDS(on) = 6.5 mΩ at VGS = 4.5 V, ID = 14 A Q2: N-Channel „ Max rDS(on) = 1.6 mΩ at VGS = 10 V, ID = 32 A „ Max rDS(on) = 2.0 mΩ at VGS = 4.5 V, ID = 28 A „ Low Inductance Packaging Shortens Rise/Fall Times, Result- ing in Lower Switching Losses „ MOSFET Integration Enables Optimum Layout for Lower Circuit Inductance and Reduced Switch Node Ringing This device includes two specialized N-Channel MOSFETs in a dual package. The switch node has been internally connected to enable easy placement and routing of synchronous buck converters.
Published: |