FDPF085N10A Key Features
- RDS(on) = 6.5 mΩ (Typ.) @ VGS = 10 V, ID = 40 A
- Fast Switching Speed
- Low Gate Charge, QG = 31 nC (Typ.)
- High Performance Trench Technology for Extremely Low
- High Power and Current Handling Capability
- RoHS pliant
| Manufacturer | Part Number | Description |
|---|---|---|
Inchange Semiconductor |
FDPF085N10A | N-Channel MOSFET |